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ISOCOM COMPONENTS
ISOCOM COMPONENTS


H11G3X

(H11Gxx) HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR



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H11G1X, H11G2X, H11G3X
H11G1, H11G2, H11G3
HIGH VOLTAGE DARLINGTON
OUTPUT OPTICALLY COUPLED
ISOLATOR
APPROVALS
l UL recognised, File No. E91231
2.54 Dimensions in
mm
'X' SPECIFICATION APPROVALS
l VDE 0884 in 2 available lead forms : -
7.0 1
6.0
2
- STD
- G form
1.2 3
DESCRIPTION
The H11G_ series are optically coupled isolators
7.62
6.62 4.0
3.0
7.62
consisting of an infrared light emitting diode and
a high voltage NPN silicon photo darlington
which has an integral base-emitter resistor to
optimise switching speed and elevated
3.0
0.5
0.5
3.35
0.26
temperature characteristics in a standard 6pin
dual in line plastic package.
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
6
5
4
13°
Max
FEATURES
l Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
l High Isolation Voltage (5.3kV ,7.5kV )
RMS
PK
l High Current Transfer Ratio ( 1000% min)
l High BVCEO (H11G1 - 100V min.)
l Low collector dark current :-
100nA max. at 80V V
CE
l Low input current 1mA I
F
APPLICATIONS
l Modems
l Copiers, facsimiles
l Numerical control machines
l Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
OPTION G
7.62
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Peak Forward Current
(1µs pulse, 300pps)
Reverse Voltage
Power Dissipation
60mA
3A
3V
100mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
H11G3, H11G2, H11G1
Collector-base Voltage BV
CBO
H11G3, H11G2, H11G1
Emitter-baseVoltage BVECO
Power Dissipation
55, 80, 100V
55, 80, 100V
6V
200mW
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
POWER DISSIPATION
Total Power Dissipation
260mW
ISOCOMCOMPONENTSLTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1YD England Tel: (01429)863609
Fax : (01429) 863581 e-mail sales@isocom.co.uk
http://www.isocom.com
7/12/00
DB92008m-AAS/a1



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H11G3X pdf
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS
Input
Forward Voltage (VF)
Reverse Voltage (VR)
Reverse Current (I )
R
1.2 1.5 V
3V
10 µA
Output
Collector-emitter Breakdown (BV )
CEO
H11G1
H11G2
H11G3
Collector-base Breakdown (BVCBO )
H11G1
H11G2
H11G3
Emitter-base Breakdown (BVEBO )
Collector-emitter Dark Current (I )
CEO
H11G1
H11G2
H11G3
100
80
55
100
80
55
6
V
V
V
V
V
V
V
100 nA
100 nA
100 nA
Coupled
Collector Output Current ( I )
C
H11G1,H11G2
H11G1,H11G2
H11G3
Collector-emitterSaturationVoltageVCE(SAT)
H11G1,H11G2
H11G1,H11G2
H11G3
Input to Output Isolation Voltage V
ISO
Input-output Isolation Resistance RISO
Input-output Capacitance
Cf
Turn-on Time
ton
Turn-off Time
toff
100
5
2
5300
7500
1011
0.5
5
100
1.0
1.2
1.2
mA
mA
mA
V
V
V
V
RMS
VPK
pF
µs
µs
TEST CONDITION
IF = 10mA
IR = 10µA
V =6V
R
I = 1mA
C
IC = 1mA
IC = 1mA
I
C
=
100µA
IC = 100µA
I
C
=
100µA
IE = 0.1mA
VCE = 80V
V = 60V
CE
VCE = 30V
10mA IF, 1.2V VCE
1mA IF, 5V VCE
1mA I , 5V V
F CE
1mA IF, 1mA IC
16mA IF, 50mA IC
20mA I , 50mA I
FC
See note 1
See note 1
VIO= 500V (note 1)
V = 0, f =1MHz
I = 10mA, V = 5V,
F CC
R
L
=
100Ω,
f
=
30Hz,
pulse width equal to
or less than 300µs
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
IF = 10mA
Input
7/12/00
FIGURE 1
VCC
100
Input
ton
tr
Output Output
10%
90%
t
off
tf
10%
90%
DB92008m-AAS/a1



Part Number H11G3X
Description (H11Gxx) HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR
Maker ISOCOM COMPONENTS - ISOCOM COMPONENTS
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