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Fairchild Semiconductor Electronic Components Datasheet



H11G3

HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS



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H11G3 pdf
HIGH VOLTAGE
PHOTODARLINGTON OPTOCOUPLERS
DESCRIPTION
The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a
gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor
which has an integral base-emitter resistor to optimize elevated temperature characteristics.
H11G1
H11G2
H11G3
FEATURES
• High BVCEO
- Minimum 100 V for H11G1
- Minimum 80 V for H11G2
- Minimum 55 V for H11G3
• High sensitivity to low input current
Minimum 500 percent CTR at IF = 1 mA
• Low leakage current at elevated temperature
(maximum 100 µA at 80°C)
• Underwriters Laboratory (UL) recognized File# E90700
APPLICATIONS
CMOS logic interface
Telephone ring detector
Low input TTL interface
Power supply isolation
Replace pulse transformer
ANODE 1
CATHODE 2
6 BASE
5 COLLECTOR
N/C 3
4 EMITTER
ABSOLUTE MAXIMUM RATINGS
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
Input-Output Isolation Voltage
EMITTER
Forward Input Current
Reverse Input Voltage
Forward Current - Peak (1µs pulse, 300pps)
LED Power Dissipation @ TA = 25°C
Derate above 25°C
DETECTOR
Collector-Emitter Voltage
H11G1
H11G2
H11G3
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
NOTE
All dimensions are in inches (millimeters)
Symbol
TSTG
TOPR
TSOL
PD
VISO
IF
VR
IF(pk)
PD
VCEO
PD
Value
-55 to +150
-55 to +100
260 for 10 sec
260
3.5
5300
60
6.0
3.0
100
1.8
Units
°C
°C
°C
mW
mW/°C
Vac(rms)
mA
V
A
mW
mW/°C
100 V
80
55
200 mW
2.67 mW/°C
7/21/00 200045A



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H11G3 pdf
HIGH VOLTAGE
PHOTODARLINGTON OPTOCOUPLERS
H11G1, H11G2, H11G3
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Characteristic
Test Conditions Symbol
EMITTER
Forward Voltage
Forward Voltage Temp.
Coefficient
Reverse Breakdown Voltage
Junction Capacitance
Reverse Leakage Current
DETECTOR
Breakdown Voltage
Collector to Emitter
(IF = 10 mA)
(IR = 10 µA)
(VF = 0 V, f = 1 MHz)
(VF = 1 V, f = 1 MHz)
(VR = 3.0 V)
VF
VF
TA
BVR
CJ
IR
(IC = 1.0 mA, IF = 0) BVCEO
Collector to Base
Emitter to Base
Leakage Current
Collector to Emitter
(IC = 100 µA)
(VCE = 80 V, IF = 0)
(VCE = 60 V, IF = 0)
(VCE = 30 V, IF = 0)
(VCE = 80 V, IF = 0, TA = 80°C)
(VCE = 60 V, IF = 0, TA = 80°C)
BVCBO
BVEBO
ICEO
Device
ALL
ALL
ALL
ALL
ALL
ALL
H11G1
H11G2
H11G3
H11G1
H11G2
H11G3
ALL
H11G1
H11G2
H11G3
H11G1
H11G2
Min
3.0
100
80
55
100
80
55
7
Typ**
1.3
Max
1.50
Unit
V
-1.8 mV/°C
25
50
65
0.001
10
V
pF
pF
µA
V
10
100
nA
100 µA
TRANSFER CHARACTERISTICS
DC Characteristic
Test Conditions Symbol Device Min
Typ**
Max
Unit
EMITTER
Current Transfer Ratio
Collector to Emitter
(IF = 10 mA, VCE = 1 V)
(IF = 1 mA, VCE = 5 V)
CTR
H11G1/2 100 (1000)
H11G1/2 5 (500)
H11G3 2 (200)
mA (%)
Saturation Voltage
(IF = 16 mA, IC = 50 mA)
(IF = 1 mA, IC = 1 mA)
(IF = 20 mA, IC = 50 mA)
H11G1/2
VCE (SAT) H11G1/2
H11G3
0.85 1.0
0.75 1.0
0.85 1.2
V
TRANSFER CHARACTERISTICS
Characteristic
Test Conditions
SWITCHING TIMES
Turn-on Time
(RL = 100 1, IF = 10 mA)
Turn-off Time (VCE = 5 V) Pulse Width 6300 µs, f 630 Hz)
Symbol
ton
toff
Device
ALL
ALL
** All typical values at TA = 25°C
Min
Typ**
5
100
Max
Unit
µs
7/21/00 200045A



Part Number H11G3
Description HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS
Maker Fairchild Semiconductor - Fairchild Semiconductor
Total Page 6 Pages
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