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IXYS
IXYS


H0700KC17D

Fast Symmetrical Gate Turn-Off Thyristor



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H0700KC17D pdf
Date:- 28 September, 2012
Data Sheet Issue:- 2
Fast Symmetrical Gate Turn-Off Thyristor
Type H0700KC14# to H0700KC17#
Absolute Maximum Ratings
VDRM
VRSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
MAXIMUM
LIMITS
1400-1700
1500-1800
100-1360
100-1360
UNITS
V
V
V
V
ITGQ
Ls
IT(AVM)
IT(RMS)
ITSM
ITSM2
I2t
di/dtcr
PFGM
PRGM
IFGM
VRGM
toff
ton
Tj
Tstg
RATINGS
Peak turn-off current, (note 2)
Snubber loop inductance, ITM=ITGQ, (note 2)
Mean on-state current, Tsink=55°C (note 3)
Nominal RMS on-state current, 25°C (note 3)
Peak non-repetitive surge current tp=10ms
Peak non-repetitive surge current, (Note 4)
I2t capacity for fusing tp=10ms
Critical rate of rise of on-state current, (note 5)
Peak forward gate power
Peak reverse gate power
Peak forward gate current
Peak reverse gate voltage (note 6).
Minimum permissible off-time, ITM=ITGQ, (note 2)
Minimum permissible on-time
Operating temperature range
Storage temperature range
Notes:-
1) VGK=-2Volts.
2) Tj=125°C, VD=80%VDM, VDM<VDRM, diGQ/dt=40A/µs, CS=1.5µF.
3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.
4) Half-sinewave, tp=2ms
5) For di/dt>1000A/µs, consult factory.
6) May exceed this value during turn-off avalanche period.
MAXIMUM
LIMITS
700
0.3
360
700
4
7.2
80×103
1000
160
5
100
18
45
20
-40 to +125
-40 to +150
UNITS
A
µH
A
A
kA
kA
A2s
A/µs
W
kW
A
V
µs
µs
°C
°C
Data Sheet. Type H0700KC14# to H0700KC17# Issue 2
Page 1 of 15
September, 2012



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H0700KC17D pdf
Characteristics
Fast Symmetrical Gate Turn-Off Thyristor type H0700KC14# to H0700KC17#
Parameter
VTM Maximum peak on-state voltage
IL Latching current
IH Holding current.
dv/dtcr Critical rate of rise of off-state voltage
IDM Peak off state current
IRM Peak reverse current
IGKM Peak negative gate leakage current
VGT Gate trigger voltage
IGT Gate trigger current
td Delay time
tgt Turn-on time
tf Fall time
tgq Turn-off time
Igq Turn-off gate current
Qgq Turn-off gate charge
ttail Tail time
tgw Gate off-time (see note 3).
RthJK Thermal resistance junction to sink
F Mounting force
Wt Weight
MIN
-
-
-
800
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
80
-
-
-
4.5
-
TYP MAX TEST CONDITIONS
2.4 2.75 IG=1.5A, IT=700A
5 - Tj=25°C
5 - Tj=25°C
- - VD=80%VDRM, VGR=-2V
- 30 Rated VDRM, VGR=-2V
- 40 Rated VRRM
- 200 VGR=-16V
0.9 - Tj=-40°C
0.8 - Tj=25°C
VD=25V, RL=25m
0.7 - Tj=125°C
2.5 6 Tj=-40°C
0.4 1.5 Tj=25°C
VD=25V, RL=25m
20 200 Tj=125°C
VD=50%VDRM, ITGQ=700A, IGM=30A, diG/dt=15A/µs
0.5 -
Tj=25°C, di/dt=300A/µs, (10%IGM to 90%VD)
3 5 Conditions as for td, (10%IGM to 10%VD)
VD=50%VDRM, ITGQ=700A, CS=1.5µF,
0.5 -
diGQ/dt=40A/µs, VGR=-16V, (90%ITGQ to 10%ITGQ)
5 6.5 Conditions as for tf, (10%IGQ to 10%ITGQ)
190 - Conditions as for tf
580 700 Conditions as for tf
25 35 Conditions as for tf, (10%ITGQ to ITGQ<1A)
- - Conditions as for tf
- 0.063 Double side cooled
- 0.21 Cathode side cooled
- 0.09 Anode side cooled
- 9.0 (see note 2)
120 -
UNITS
V
A
A
V/µs
mA
mA
mA
V
V
V
A
A
mA
µs
µs
µs
µs
A
µC
µs
µs
K/W
K/W
K/W
kN
g
Notes:-
1) Unless otherwise indicated Tj=125oC.
2) For other clamping forces, consult factory.
3) The gate off-time is the period during which the gate circuit is
required to remain low impedance to allow for the passage
of tail current.
Data Sheet. Type H0700KC14# to H0700KC17# Issue 2
Page 2 of 15
September, 2012



Part Number H0700KC17D
Description Fast Symmetrical Gate Turn-Off Thyristor
Maker IXYS - IXYS
Total Page 15 Pages
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