http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




GTM
GTM


G2313

P-CHANNEL ENHANCEMENT MODE POWER MOSFET


No Preview Available !

G2313 pdf
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/05/16
REVISED DATE :
G2313
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-20V
160m
-2.5A
Description
The G2313 provide the designer with best combination of fast switching, low on-resistance and
cost-effectiveness.
The G2313 is universally preferred for all commercial-industrial surface mount applications and suited for low
voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Small Package Outline
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
-20
12
-2.5
-1.97
10
1.38
0.01
-55 ~ +150
Ratings
90
Unit
V
V
A
A
A
W
W/
Unit
/W
1/4



No Preview Available !

G2313 pdf
ISSUED DATE :2005/05/16
REVISED DATE :
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
-20
-
-
-
-
-
-0.01
-
4.0
-
-
-
-1.2
-
100
V VGS=0, ID=-250uA
V/ Reference to 25 , ID=-1mA
V VDS=VGS, ID=-250uA
S VDS=-5V, ID=-2A
nA VGS= 12V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- -1 uA VDS=-20V, VGS=0
- -25 uA VDS=-16V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
- 120
VGS=-10V, ID=-2.8A
- 160 m VGS=-4.5V, ID=-2.5A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
- - 300
VGS=-2.5V, ID=-2A
- 58
ID=-2A
- 1 - nC VDS=-16V
-2-
VGS=-4.5V
-6-
VDS=-10V
- 17 -
ID=-1A
ns VGS=-10V
- 16 -
RG=3.3
-5-
RD=10
- 270 430
VGS=0V
- 70 - pF VDS=-20V
- 55 -
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
20
15
Max.
-1.2
-
-
Unit Test Conditions
V IS=-1.2A, VGS=0V
ns IS=-2A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board, t
copper pad.
10sec; 270 /W when mounted on Min.
2/4



Part Number G2313
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker GTM - GTM
Total Page 4 Pages
PDF Download
G2313 pdf
Download PDF File
G2313 pdf
View for Mobile




Featured Datasheets

Part Number Description Manufacturers PDF
G2300 CMOS Positive Voltage Regulator G2300
GTM
PDF
G2301 P-CHANNEL ENHANCEMENT MODE POWER MOSFET G2301
GTM
PDF
G2302 N-CHANNEL ENHANCEMENT MODE POWER MOSFET G2302
GTM
PDF
G2303 P-CHANNEL ENHANCEMENT MODE POWER MOSFET G2303
GTM
PDF
G2304 N-CHANNEL ENHANCEMENT MODE POWER MOSFET G2304
GTM
PDF
G2304A N-CHANNEL ENHANCEMENT MODE POWER MOSFET G2304A
GTM
PDF


Part Number Start With

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z

site map

webmaste! click here

contact us

Buy Components