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GTM
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G2307

P-CHANNEL ENHANCEMENT MODE POWER MOSFET


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G2307 pdf
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Pb Free Plating Product
CORPORATION ISSUED DATE :2004/11/02
REVISED DATE :2005/10/13C
G2307
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-16V
60m
-4.0A
Description
The G2307 provides the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
The G2307 is universally preferred for all commercial-industrial surface mount applications and suited for low
voltage applications such as DC/DC converters.
Applications
Power Management in Notebook Computer
Portable Equipment
Battery Powered System.
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
-16
8
-4.0
-3.3
-12
1.38
0.01
-55 ~ +150
Ratings
90
Unit
V
V
A
A
A
W
W/
Unit
/W
1/4



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G2307 pdf
CORPORATION ISSUED DATE :2004/11/02
REVISED DATE :2005/10/13C
Electrical Characteristics (Tj = 25
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
Symbol
BVDSS
BVDSS/ Tj
VGS(th)
gfs
IGSS
IDSS
Static Drain-Source On-Resistance2
RDS(ON)
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Unless otherwise specified)
Min.
Typ.
Max.
Unit
Test Conditions
-16 -
-
V VGS=0, ID=-250uA
- -0.01 -
V/ Reference to 25 , ID=-1mA
-
- -1.0
V VDS= VGS, ID=-250uA
- 12 -
S VDS=-5.0V, ID=-4.0A
- - ±100 nA VGS= ±8V
- - -1 uA VDS=-16V, VGS=0
- - -25 uA VDS=-12V, VGS=0
- - 60
ID=-4.0A, VGS=-4.5V
- - 70 m ID=-3.0A, VGS=-2.5V
90 ID=-2.0A, VGS=-1.8V
- 15 24
ID=-4.0A
- 1.3 -
nC VDS=-12V
-4-
VGS=-4.5V
-8-
- 11 -
- 54 -
- 36 -
VDS=-10V
ID=-1A
ns VGS=-10V
RG=3.3
RD=10
- 985 1580
VGS=0V
- 180 -
pF VDS=-15V
- 160 -
f=1.0MHz
Source-Drain Diode
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
VSD
-
- -1.2
V IS=-1.2A, VGS=0
Trr
- 39 -
ns IS=-4.0A, VGS=0
Qrr
- 26 -
nC dI/dt=100A/us
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270 /W when mounted on min. copper pad.
Characteristics Curve
2/4



Part Number G2307
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker GTM - GTM
Total Page 4 Pages
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