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GTM
GTM


G2302

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



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G2302 pdf
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Pb Free Plating Product
ISSUED DATE :2004/07/06
REVISED DATE :2005/03/14B
G2302
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
20V
85m
3.2A
Description
The G2302 provide the designer with best combination of fast switching, low on-resistance and
cost-effectiveness.
Features
*Capable of 2.5V gate drive
*Small Package Outline
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS@4.5V
Continuous Drain Current3, VGS@4.5V
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA =25
ID @TA =70
IDM
PD @TA =25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
20
12
3.2
2.6
10
1.38
0.01
-55 ~ +150
Ratings
90
Unit
V
V
A
A
A
W
W/
Unit
/W
1/4



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G2302 pdf
ISSUED DATE :2004/07/06
REVISED DATE :2005/03/14B
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
20
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient BVDSS / Tj
-
0.1
- V/ Reference to 25 , ID=1mA
Gate Threshold Voltage
VGS(th)
0.5
-
1.2
V VDS=VGS, ID=250uA
Forward Transconductance
gfs - 6 - S VDS=5V, ID=3.6A
Gate-Source Leakage Current
IGSS - - 100 nA VGS= 12V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- 1 uA VDS=20V, VGS=0
- 10 uA VDS=20V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
- 85 m VGS=4.5V, ID=3.6A
- 115
VGS=2.5V, ID=3.1A
4.4 -
ID=3.6A
0.6 - nC VDS=10V
1.9 -
VGS=4.5V
5.2 -
37 -
15 -
5.7 -
VDS=10V
ID=3.6A
ns VGS=5V
RG=6
RD=2.8
145 -
100 -
50 -
VGS=0V
pF VDS=10V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.2
1
10
Unit Test Conditions
V IS=1.6A, VGS=0V
A VD= VG=0V, VS=1.2V
A
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board;270 /W when mounted on min. copper pad.
2/4



Part Number G2302
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker GTM - GTM
Total Page 4 Pages
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