http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




GTM
GTM


G2301

P-CHANNEL ENHANCEMENT MODE POWER MOSFET



No Preview Available !

G2301 pdf
www.DataSheet4U.com
Pb Free Plating Product
CORPORATION ISSUED DATE :2004/10/12
REVISED DATE :2005/03/22B
G2301
BVDSS
-20V
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
RDS(ON)
ID
130m
-2.6A
The G2301 provides the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
The G2301 is universally preferred for all commercial-industrial surface mount applications and suited for low
voltage applications such as DC/DC converters.
Features
Super High Dense Cell Design for Extremely Low RDS(ON)
Reliable and Rugged
Applications
Power Management in Notebook Computer
Portable Equipment
Battery Powered System.
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
-20
12
-2.6
-2.1
-10
1.38
0.01
-55 ~ +150
Ratings
90
Unit
V
V
A
A
A
W
W/
Unit
/W
1/4



No Preview Available !

G2301 pdf
Electrical Characteristics(Tj = 25
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Symbol
BVDSS
BVDSS/ Tj
VGS(th)
gfs
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IGSS
IDSS
Static Drain-Source On-Resistance2
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RDS(ON)
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
CORPORATION ISSUED DATE :2004/10/12
REVISED DATE :2005/03/22B
Unless otherwise specified)
Min.
Typ.
Max.
Unit
Test Conditions
-20 -
- -0.1
-0.5 -
- 4.4
--
- V VGS=0, ID=-250uA
- V/ Reference to 25 , ID=-1mA
- V VDS= VGS, ID=-250uA
- S VDS=-5.0V, ID=-2.8A
100 nA VGS= 12V
- - -1 uA VDS=-20V, VGS=0
- - -10 uA VDS=-16V, VGS=0
- - 130 m ID=-2.8A, VGS=-5.0V
- - 190
ID=-2.0A, VGS=-2.8V
- 5.2 10
ID=-2.8A
- 1.36 -
nC VDS=-6.0V
- 0.6 -
VGS=-5.0V
- 5.2 -
- 9.7 -
- 19 -
- 29 -
VDS=-15V
ID=-1A
ns VGS=-10V
RG=6
RD=15
- 295 -
- 170 -
- 65 -
VGS=0V
pF VDS=-6V
f=1.0MHz
Source-Drain Diode
Forward On Voltage2
Continuous Source Current(Body Diode)
Pulsed Source Current (Body Diode) 1
VSD
IS
ISM
-
-
-
- -1.2
- -1
- -10
V IS=-1.6A, VGS=0 Tj=25
A VD= VG=0V, VS=-1.2V
A
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board;270 /w when mounted on min. copper pad.
Characteristics Curve
2/4



Part Number G2301
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker GTM - GTM
Total Page 4 Pages
PDF Download
G2301 pdf
Download PDF File
G2301 pdf
View for Mobile




Featured Datasheets

Part Number Description Manufacturers PDF
G2300 CMOS Positive Voltage Regulator G2300
GTM
PDF
G2301 P-CHANNEL ENHANCEMENT MODE POWER MOSFET G2301
GTM
PDF
G2302 N-CHANNEL ENHANCEMENT MODE POWER MOSFET G2302
GTM
PDF
G2303 P-CHANNEL ENHANCEMENT MODE POWER MOSFET G2303
GTM
PDF
G2304 N-CHANNEL ENHANCEMENT MODE POWER MOSFET G2304
GTM
PDF
G2304A N-CHANNEL ENHANCEMENT MODE POWER MOSFET G2304A
GTM
PDF


Part Number Start With

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z

site map

webmaste! click here

contact us

Buy Components