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Fairchild Semiconductor Electronic Components Datasheet



G20N60B3D

40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode



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G20N60B3D pdf
Data Sheet
HGTG20N60B3D
December 2001
40A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG20N60B3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. The device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. The
diode used in anti-parallel with the IGBT is the RHRP3060.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential.
Formerly developmental type TA49016.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG20N60B3D
TO-247
G20N60B3D
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• 40A, 600V at TC = 25oC
• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC
• Short Circuit Rated
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(BOTTOM SIDE METAL)
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGTG20N60B3D Rev. B



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G20N60B3D pdf
HGTG20N60B3D
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector to Gate Voltage, RGE = 1M. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Average Diode Forward Current at 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I(AVG)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TC = 150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
HGTG20N60B3D
600
600
40
20
20
160
±20
±30
30A at 600V
165
1.32
-40 to 150
260
4
10
UNITS
V
V
A
A
A
A
V
V
W
W/oC
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE = 360V, TC = 125oC, RG = 25Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
BVCES
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
IC = 250µA, VGE = 0V
VCE = BVCES
TC = 25oC
TC = 150oC
IC = IC110,
TC = 25oC
VGE = 15V
TC = 150oC
IC = 250µA, VCE = VGE
VGE = ±20V
TC = 150oC
VGE = 15V,
RG = 10Ω,
L = 45µH
VCE = 480V
VCE = 600V
600 - - V
- - 250 µA
- - 2.0 mA
- 1.8 2.0 V
- 2.1 2.5 V
3.0 5.0 6.0
V
-
-
±100
nA
100 - - A
30 - - A
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance
VGEP
QG(ON)
td(ON)I
trI
td(OFF)I
tfI
EON
EOFF
VEC
trr
RθJC
IC = IC110, VCE = 0.5 BVCES
IC = IC110,
VCE = 0.5 BVCES
TC = 150oC,
ICE = IC110
VCE = 0.8 BVCES,
VGE = 15V
RG = 10Ω,
L = 100µH
VGE = 15V
VGE = 20V
IEC = 20A
IEC = 20A, dIEC/dt = 100A/µs
IEC = 1A, dIEC/dt = 100A/µs
IGBT
Diode
- 8.0 -
V
- 80 105 nC
- 105 135 nC
- 25 - ns
- 20 - ns
-
220 275
ns
-
140 175
ns
- 475 -
µJ
- 1050 -
µJ
- 1.5 1.9 V
- - 55 ns
- - 45 ns
-
-
0.76
oC/W
- - 1.2 oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A) The HGTG20N60B3D was tested per JEDEC standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
diode losses.
©2001 Fairchild Semiconductor Corporation
HGTG20N60B3D Rev. B



Part Number G20N60B3D
Description 40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Maker Fairchild - Fairchild
Total Page 7 Pages
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