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Vishay Intertechnology Electronic Components Datasheet


G20N50C

SIHG20N50C



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G20N50C pdf
Power MOSFET
SiHG20N50C
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
560
VGS = 10 V
76
21
34
Single
0.270
D
TO-247AC
G
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Low Figure-of-Merit Ron x Qg
• 100 % Avalanche Tested
• High Peak Current Capability
• dV/dt Ruggedness
• Improved Trr/Qrr
• Improved Gate Charge
• High Power Dissipations Capability
• Compliant to RoHS Directive 2002/95/EC
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
Lead (Pb)-free and Halogen-free
TO-247AC
SiHG20N50C-E3
SiHG20N50C-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)e
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
EAS
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 Ω, IAS = 17 A.
c. ISD 18 A, dI/dt 380 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. Limited by maximum junction temperature.
LIMIT
500
± 30
20
11
80
1.8
361
250
5
- 55 to + 150
300d
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
40
0.5
UNIT
V
A
W/°C
mJ
W
V/ns
°C
UNIT
°C/W
Document Number: 91382
S11-0440-Rev. C, 14-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vFishary.coem/deoc?910D00 a t a s



No Preview Available !

G20N50C pdf
SiHG20N50C
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
VDS
ΔVDS/TJ
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
RDS(on)
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 10 A
VDS = 50 V, ID = 10 A
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz
VGS = 10 V
ID = 18 A, VDS = 400 V
VDD = 250 V, ID = 18 A,
Rg = 9.1 Ω
f = 1 MHz, open drain
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
D
Pulsed Diode Forward Current
integral reverse
G
ISM p - n junction diode
S
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
VSD
trr
Qrr
IRRM
TJ = 25 °C, IS = 18 A, VGS = 0 V
TJ = 25 °C, IF = IS,
dI/dt = 100 A/μs, V = 35 V
MIN. TYP. MAX. UNIT
500 -
-V
- 700 - mV/°C
3.0 - 5.0 V
- - ± 100 nA
- - 25
μA
- - 250
- 0.225 0.270 Ω
- 6.4 - S
- 2451 2942
- 300 360 pF
- 26 32
- 65 76
- 21 - nC
- 29 -
- 80 -
- 27 -
ns
- 32 -
- 44 -
- 1.1 - Ω
- - 20
A
- - 80
- - 1.5 V
- 503 - ns
- 6.7 - μC
- 30 - A
The information shown here is a preliminary product proposal, not a commercial product datasheet. Vishay Siliconix is not committed to produce this or any similar
product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products.
www.vishay.com
2
Document Number: 91382
S11-0440-Rev. C, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Part Number G20N50C
Description SIHG20N50C
Maker Vishay - Vishay
Total Page 8 Pages
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