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GTM
GTM


G138

N-CHANNEL ENHANCEMENT MODE POWER MOSFET


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G138 pdf
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Pb Free Plating Product
ISSUED DATE :2006/03/01
REVISED DATE :
G138
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
50V
3.5
500mA
Description
The G138 has been designed to minimize on-state resistance, while provide rugged, reliable and fast switching
performance.
The G138 is universally used for all commercial-industrial surface mount applications.
Features
*Simple Drive Requirement
*Small Package Outline
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS@10V
Continuous Drain Current3, VGS@10V
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0° 10°
Ratings
50
±20
500
400
800
225
0.002
-55 ~ +150
Value
556
Unit
V
V
mA
mA
mA
mW
W/
Unit
/W
1/4



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G138 pdf
ISSUED DATE :2006/03/01
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
50
-
-
V VGS=0, ID=250uA
VGS(th)
0.5
-
2.0
V VDS=VGS, ID=1mA
gfs - 500 - mS VDS=10V, ID=220mA
IGSS - - 100 nA VGS= 20V
Drain-Source Leakage Current(Tj=25 ) IDSS - - 1 uA VDS=50V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
-
-
- 3.5
- 6.0
VGS=10V, ID=220mA
VGS=4.5V, ID=220mA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Ciss - - 50
VGS=0V
Coss - - 25 pF VDS=25V
Crss - - 5
f=1.0MHz
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Forward On Voltage2
VSD - - 1.5 V IS=100mA, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270
/W when mounted on Min. copper pad.
2/4



Part Number G138
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker GTM - GTM
Total Page 4 Pages
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