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GTM
GTM


G1333

P-CHANNEL ENHANCEMENT MODE POWER MOSFET



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G1333 pdf
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Pb Free Plating Product
ISSUED DATE :2005/03/10
REVISED DATE :
G1333
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-20V
800m
-550mA
Description
The G1333 provide the designer with best combination of fast switching, low on-resistance and
cost-effectiveness.
Features
*Simple Gate Drive
*Small Package Outline
*Fast Switching Speed
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
-20
12
-550
-440
2.5
1.0
0.008
-55 ~ +150
Ratings
125
Unit
V
V
mA
mA
A
W
W/
Unit
/W
1/4



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G1333 pdf
ISSUED DATE :2005/03/10
REVISED DATE :
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
-20
-
-0.5
-
-
-
0.01
-
1
-
-
-
-1.2
-
100
V VGS=0, ID=-250uA
V/ Reference to 25 , ID=-1mA
V VDS=VGS, ID=-250uA
S VDS=-5V, ID=-550mA
nA VGS= 12V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- -1 uA VDS=-20V, VGS=0
- -10 uA VDS=-16V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
-
-
- 600
VGS=-10V, ID=-550mA
- 800 m VGS=-4.5V, ID=-500mA
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
- - 1000
VGS=-2.5V, ID=-300mA
Qg - 1.7 2.7
ID=-500mA
Qgs - 0.3 - nC VDS=-16V
Qgd - 0.4 -
VGS=-4.5V
Td(on)
-
5
-
VDS=-10V
Tr
-8-
ID=-500mA
ns VGS=-5V
Td(off) - 10 -
RG=3.3
Tf - 2 -
RD=20
Ciss
Coss
Crss
- 66 105.6
VGS=0V
- 25 - pF VDS=-10V
- 20 -
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol
VSD
Min.
-
Typ.
-
Max.
-1.2
Unit Test Conditions
V IS=-300mA, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on FR4 board, t 10sec.
2/4



Part Number G1333
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker GTM - GTM
Total Page 4 Pages
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