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GTM
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G1332E

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



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G1332E pdf
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Pb Free Plating Product
ISSUED DATE :2005/03/10
REVISED DATE :2006/11/24C
G1332E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
20V
600m
600mA
Description
The G1332E provide the designer with best combination of fast switching, low on-resistance and
cost-effectiveness.
Features
*Simple Gate Drive
*Small Package Outline
*2KV ESD Rating (Per MIL-STD-883D)
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0° 10°
Ratings
20
±5
600
470
2.5
1.0
0.008
-55 ~ +150
Value
125
Unit
V
V
mA
mA
A
W
W/
Unit
/W
G1332E
Page: 1/4



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G1332E pdf
ISSUED DATE :2005/03/10
REVISED DATE :2006/11/24C
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
20
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient BVDSS / Tj
-
0.02
-
V/ Reference to 25 , ID=1mA
Gate Threshold Voltage
VGS(th)
0.5
-
1.2
V VDS=VGS, ID=250uA
Forward Transconductance
gfs - 1 - S VDS=5V, ID=600mA
Gate-Source Leakage Current
IGSS - - ±10 uA VGS= ±5V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- 1 uA VDS=20V, VGS=0
- 10 uA VDS=16V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
- 600 m VGS=4.5V, ID=600mA
- 1200
VGS=2.5V, ID=400mA
1.3 2
ID=600mA
0.3 - nC VDS=16V
0.5 -
VGS=4.5V
4-
VDS=10V
10 -
ID=600mA
15
-
ns VGS=10V
RG=3.3
2-
RD=16.7
38 60
VGS=0V
17 - pF VDS=10V
12 -
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol
VSD
Min.
-
Typ.
-
Max.
1.2
Unit Test Conditions
V IS=300mA, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on FR4 board, t 10sec.
G1332E
Page: 2/4



Part Number G1332E
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker GTM - GTM
Total Page 4 Pages
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