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GTM
GTM


G1270

NPN EPITAXIAL PLANAR TRANSISTOR



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G1270 pdf
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ISSUED DATE :2005/08/01
REVISED DATE :
G1270
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The G1270 is designed for general purpose switching and amplifier applications.
Features
Excellent hFE(2)=25(Min.) @ VCE=-6V, IC=-400mA
Package Dimensions
D
E
S1
TO-92
S E A T IN G
PLANE
b1
e1
e
b
C
Absolute Maximum Ratings (TA=25 )
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (DC)
IC
Total Device Dissipation
PD
Junction Temperature
TJ
Storage Temperature
Tstg
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70
-
1.150 1.390
2.42 2.66
Ratings
-35
-30
-5
-500
625
150
-55 ~ +150
Unit
V
V
V
mA
mW
Electrical Characteristics (TA = 25
Symbol
Min.
Typ.
BVCBO
-35 -
BVCEO
-30 -
BVEBO
-5 -
ICBO
--
IEBO
--
*VCE(sat)
--
*VBE(on)
--
*hFE1
70 -
*hFE2
25 -
fT 100 -
Cob - -
Classification Of hFE
Rank
hFE1 Range
hFE2 Range
O
70 - 140
Min. 25
unless otherwise noted)
Max.
Unit
Test Conditions
- V IC=-100uA, IE=0
- V IC=-1mA, IB=0
-
-100
-100
V IE=-100uA, IC=0
nA VCB=-35V, IE=0
nA VEB=-5V, IC=0
-0.25
V IC=-100mA, IB=-10mA
-1.0 V VCE=-1V, IC=-100mA
240 VCE=-1V, IC=-100mA
- VCE=-6V, IC=-400mA
- MHz VCE=-1V, IC=-10mA, f=100MHz
8 pF VCB=-10V, IE=0, f=1MHz
*Pulse Test: Pulse Width 380 s, Duty Cycle
Y
120 - 240
Min. 40
2%
1/2



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ISSUED DATE :2005/08/01
REVISED DATE :
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
2/2



Part Number G1270
Description NPN EPITAXIAL PLANAR TRANSISTOR
Maker GTM - GTM
Total Page 2 Pages
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