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IXYS
IXYS


G1000LL250

Anode-Shorted Gate Turn-Off Thyristor



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G1000LL250 pdf
Date:- 18 Feb, 2004
Data Sheet Issue:- 1
Anode-Shorted Gate Turn-Off Thyristor
Type G1000L#250
Absolute Maximum Ratings
VDRM
VRSM
VRRM
VDC-link
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1).
Non-repetitive peak off-state voltage, (note 1).
Repetitive peak reverse voltage.
Maximum continuous DC-link voltage.
MAXIMUM
LIMITS
2500
2500
18
1400
UNITS
V
V
V
V
ITGQM
Ls
IT(AV)M
IT(RMS)
ITSM
ITSM2
I2t
di/dtcr
PFGM
PRGM
IFGM
VRGM
toff
ton
Tj op
Tstg
RATINGS
Maximum turn-off current, (note 2).
Snubber loop inductance, ITM=ITGQM, (note 2).
Mean on-state current, Tsink=55°C (note 3).
Nominal RMS on-state current, 25°C (note 3).
Peak non-repetitive surge current tp=10ms.
Peak non-repetitive surge current, (Note 4)
I2t capacity for fusing tp=10ms.
Critical rate of rise of on-state current, (note 5).
Peak forward gate power.
Peak reverse gate power.
Peak forward gate current.
Peak reverse gate voltage (note 6).
Minimum permissible off-time, ITM=ITGQM, (note 2).
Minimum permissible on-time.
Operating temperature range.
Storage temperature range.
Notes:-
1) VGK=-2Volts.
2) Tj=125°C, VD=80%VDM, VDM<VDRM, diGQ/dt=20A/µs, CS=2µF.
3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.
4) Half-sinewave, tp=2ms
5) For di/dt>1000A/µs, consult factory.
6) May exceed this value during turn-off avalanche period.
MAXIMUM
LIMITS
1000
0.3
500
970
7.5
8.9
125x103
1000
160
8
100
18
80
20
-40 to +125
-40 to +150
UNITS
A
µH
A
A
kA
kA
A2s
A/µs
W
kW
A
V
µs
µs
°C
°C
Data Sheet. Type G1000L#250 Issue 1
Page 1 of 13
February, 2004



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G1000LL250 pdf
WESTCODE An IXYS Company
Characteristics
Anode-Shorted Gate Turn-Off Thyristor type G1000L#250
PARAMETER
VTM Maximum peak on-state voltage.
IL Latching current.
IH Holding current.
dv/dtcr Critical rate of rise of off-state voltage.
IDM Peak off state current.
IRM Peak reverse current.
IGKM Peak negative gate leakage current.
VGT Gate trigger voltage.
IGT Gate trigger current.
td Delay time.
tgt Turn-on time.
tf Fall time.
tgq Turn-off time.
Igq Turn-off gate current.
Qgq Turn-off gate charge.
ttail Tail time.
tgw Gate off-time (see note 3).
RthJK Thermal resistance junction to sink.
F Mounting force.
Wt Weight
MIN
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
120
-
-
-
10
-
-
TYP MAX TEST CONDITIONS
- 2.5 IG=2A, IT=1000A.
10 50 Tj=25°C.
10 50 Tj=25°C.
- - VD=80%VDRM, VGR=-2V.
- 30 Rated VDRM, VGR=-2V
- 50 Rated VRRM
- 50 VGR=-16V
1.2 - Tj=-40°C.
1.0 - Tj=25°C. VD=24V, RL=100m
0.8 - Tj=125°C.
1.5 4.0 Tj=-40°C.
0.8 2.0 Tj=25°C.
VD=24V, RL=100m
0.3 0.7 Tj=125°C.
VD=50%VDRM, ITGQ=1000A, IGM=20A, diG/dt=20A/µs
1.0 -
Tj=25°C, di/dt=300A/µs, (10%IGM to 90%VD).
2.0 - Conditions as for td, (10%IGM to 10%VD).
VD=50%VDRM, ITGQ=1000A, CS=2µF,
1.0 -
diGQ/dt=25A/µs, VGR=-16V, (90%ITGQ to 10%IVD).
16
280
2000
40
-
19 Conditions as for tf, (10%IGQ to 10%ITGQ).
- Conditions as for tf.
3000 Conditions as for tf.
60 Conditions as for tf, (10%ITGQ to ITGQ<1A).
- Conditions as for tf.
- 0.05 Double side cooled.
- 0.13 Cathode side cooled.
- 0.08 Anode side cooled.
- 12 (see note 2).
300 - Housing option LL
170 - Housing option LM
UNITS
V
A
A
V/µs
mA
mA
mA
V
V
V
A
A
A
µs
µs
µs
µs
A
µC
µs
µs
K/W
K/W
K/W
kN
g
Notes:-
1) Unless otherwise indicated Tj=125oC.
2) For other clamping forces, consult factory.
3) The gate off-time is the period during which the gate circuit is
required to remain low impedance to allow for the passage
of tail current.
Data Sheet. Type G1000L#250 Issue 1
Page 2 of 13
February, 2004



Part Number G1000LL250
Description Anode-Shorted Gate Turn-Off Thyristor
Maker IXYS - IXYS
Total Page 13 Pages
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