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Infineon Technologies Electronic Components Datasheet


G03H1202

High Speed 2-Technology



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IGA03N120H2
HighSpeed 2-Technology
Designed for:
- TV – Horizontal Line Deflection
2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =3A
- simple Gate-Control
C
G
E
P-TO220-3-31
(FullPAK)
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO220-3-34
(FullPAK)
Type
VCE
IC
Eoff
Tj,max
Marking
Package
Ordering Code
IGA03N120H2 1200V 3A 0.15mJ 150°C G03H1202 P-TO-220-3-31 Q67040-S4648
IGA03N120H2 1200V 3A 0.15mJ 150°C G03H1202 P-TO-220-3-34 Q67040-S4654
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DataSheet4U.comVC E
Triangular collector peak current (VGS = 15V)
ICpk
TC = 100°C, f = 32kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
ICpuls
-
VCE 1200V, Tj 150°C
Gate-emitter voltage
VGE
Power dissipation
Ptot
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Tj , Tstg
-
Value
1200
8.2
9
9
±20
29
-40...+150
260
Unit
V
A
V
W
°C
DataShee
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Power Semiconductors
DataSheet4 U .com
1
Mar-04, Rev. 2.0



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G03H1202 pdf
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IGA03N120H2
et4U.com
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJA
Conditions
P-TO-220-3-31
P-TO-220-3-34
Max. Value
4.3
64
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
V(BR)CES VGE=0V, IC=300µA
VCE(sat) VGE = 15V, IC=3A
Tj=25°C
Tj=150°C
VGE = 10V, IC=3A,
Tj=25°C
VGE(th) IC=90µA,VCE=VGE
I C E S DataSVhCeEe=t41U2.0c0oVm, V G E = 0V
Tj=25°C
Tj=150°C
IGES
VCE=0V,VGE=20V
gfs VCE=20V, IC=3A
Ciss
Coss
Crss
QGate
LE
VCE=25V
VGE=0V
f=1MHz
VCC=960V, IC=3A
VGE=15V
P-TO-220-3-31
min.
1200
-
-
-
2.1
-
-
-
-
-
-
-
-
-
Value
Unit
Typ. max.
- -V
2.2 2.8
2.5 -
2.4 -
3 3.9
µA
- 20
- 80
- 100 nA
2 -S
205 - pF
24 -
7-
8.6 - nC
7 - nH
DataShee
DataSheet4U.com
Power Semiconductors
DataSheet4 U .com
2
Mar-04, Rev. 2.0



Part Number G03H1202
Description High Speed 2-Technology
Maker Infineon - Infineon
Total Page 11 Pages
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