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Fairchild Semiconductor Electronic Components Datasheet



FDPF10N50FT

MOSFET


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FDPF10N50FT pdf
FDP10N50F / FDPF10N50FT
N-Channel MOSFET
500V, 9A, 0.85Ω
Features
• RDS(on) = 0.71Ω ( Typ.) @ VGS = 10V, ID = 4.5A
• Low Gate Charge ( Typ. 18nC)
• Low Crss ( Typ. 10pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
January 2009
UniFETTM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
D
GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
S
FDP10N50F FDPF10N50FT
500
±30
9 9*
5.4 5.4*
36 36*
364
9
12.5
20
125 42
1.0 0.33
-55 to +150
300
FDP10N50F
1.0
62.5
FDPF10N50FT
3.0
62.5
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2009 Fairchild Semiconductor Corporation
FDP10N50F / FDPF10N50FT Rev. A
1
www.fairchildsemi.com



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FDPF10N50FT pdf
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FDP10N50F
Device
FDP10N50F
Package
TO-220
Reel Size
-
Tape Width
-
FDPF10N50FT
FDPF10N50FT
TO-220F
-
-
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250μA, VGS = 0V, TJ = 25oC
ID = 250μA, Referenced to 25oC
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125oC
VGS = ±30V, VDS = 0V
500
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250μA
VGS = 10V, ID = 4.5A
VDS = 20V, ID = 4.5A
(Note 4)
3.0
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V, ID = 10A
VGS = 10V
(Note 4, 5)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250V, ID = 10A
RG = 25Ω
(Note 4, 5)
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 9A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 9A
dIF/dt = 100A/μs
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 9mH, IAS = 9A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3: ISD 8A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
4: Pulse Test: Pulse width 300μs, Duty Cycle 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
(Note 4)
-
-
-
-
-
Typ.
-
0.5
-
-
-
-
0.71
8.5
880
120
10
18
5
7.5
20
40
45
30
-
-
-
95
0.2
Quantity
50
50
Max. Units
-
-
10
100
±100
V
V/oC
μA
nA
5.0 V
0.85 Ω
-S
1170
160
15
24
-
-
pF
pF
pF
nC
nC
nC
50 ns
90 ns
100 ns
70 ns
9A
60 A
1.5 V
- ns
- μC
FDP10N50F / FDPF10N50FT Rev. A
2
www.fairchildsemi.com



Part Number FDPF10N50FT
Description MOSFET
Maker Fairchild Semiconductor - Fairchild Semiconductor
Total Page 9 Pages
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