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Fairchild Semiconductor Electronic Components Datasheet



FDP023N08B

MOSFET


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FDP023N08B pdf
FDP023N08B
N-Channel PowerTrench® MOSFET
75 V, 242 A, 2.35 mΩ
November 2013
Features
• RDS(on) = 1.96 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A
• Low FOM RDS(on)*QG
• Low Reverse Recovery Charge, Qrr
• Soft Reverse Recovery Body Diode
• Enables Highly Efficiency in Synchronous Rectification
• Fast Switching Speed
• 100% UIL Tested
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• DC motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverte
D
GDS TO-220
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Continuous (TC = 25oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
* Package limitation current is 120A.
FDP023N08B_F102
75
±20
242*
171*
120
968
961
6
245
1.64
-55 to +175
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDP023N08B_F102
0.61
62.5
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2013 Fairchild Semiconductor Corporation
FDP023N08B Rev. C3
1
www.fairchildsemi.com



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FDP023N08B pdf
Package Marking and Ordering Information
Part Number
FDP023N08B_F102
Top Mark
FDP023N08B
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0V, TC = 25oC
ID = 250 μA, Referenced to 25oC
VDS = 60 V, VGS = 0 V
VDS = 60 V, TC = 150oC
VGS = ±20 V, VDS = 0 V
75
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 75 A
VDS = 10 V, ID = 75 A
2.0
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Coss(er)
Qg(tot)
Qgs
Qgd
Vplateau
Qsync
Qoss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Gate Plateau Volatge
Total Gate Charge Sync.
Output Charge
VDS = 37.5 V, VGS = 0 V,
f = 1 MHz
VDS = 37.5 V, VGS = 0 V
VDS = 37.5 V, ID = 100 A,
VGS = 10 V
VDS = 0 V, ID = 50 A
VDS = 37.5 V, VGS = 0 V
(Note 4)
-
-
-
-
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
ESR
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Equivalent Series Resistance (G-S)
VDD = 37.5 V, ID = 100 A,
VGS = 10 V, RG = 4.7 Ω
f = 1 MHz
(Note 4)
-
-
-
-
-
Typ. Max. Unit
-
0.35
-
-
-
-
-
1
500
±100
V
V/oC
μA
nA
- 3.8 V
1.96 2.35 mΩ
185 - S
10350
1855
46.8
3290
150
50.3
31.7
4.9
127.4
146.2
13765
2465
-
-
195
-
-
-
-
-
pF
pF
pF
pF
nC
nC
nC
V
nC
nC
41 92 ns
71 151 ns
111 232 ns
56 122 ns
2.23 - Ω
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 75 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, VDD=37.5 V,
ISD = 100 A, dIF/dt = 100 A/μs
-
-
242*
A
- - 968 A
- - 1.3 V
- 79.3 - ns
- 114 - nC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 3 mH, IAS = 25.32 A, starting TJ = 25°C.
3. ISD 100 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
©2013 Fairchild Semiconductor Corporation
FDP023N08B Rev. C3
2
www.fairchildsemi.com



Part Number FDP023N08B
Description MOSFET
Maker Fairchild Semiconductor - Fairchild Semiconductor
Total Page 11 Pages
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