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Polyfet RF Devices
Polyfet RF Devices


F1516

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR



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F1516 pdf
polyfet rf devices
F1516
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" TMprocess features
gold metal for greatly extended
lifetime. Low output capacitance
and high Ft enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
16 Watts Single Ended
Package Style AP
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 Co )
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
40 Watts
4.2 oC/W
200 oC
-65 oC to 150oC
3.2 A
70 V
70 V 30V
RF CHARACTERISTICS ( 16WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gai
11
dB Idq = 0.8 A, Vds = 28.0 V, F = 500 MHz
η Drain Efficiency
55 % Idq = 0.8 A, Vds = 28.0 V, F = 500 MHz
VSWR Load Mismatch Toleranc
20:1 Relative Idq = 0.8 A, Vds = 28.0 V, F = 500 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdown Voltag
65
V Ids = 0.04 A, Vgs = 0V
Idss Zero Bias Drain Curren
0.8 mA Vds = 28.0 V, Vgs = 0V
Igss Gate Leakage Curren
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Curren
1 7 V Ids =0.08 A, Vgs = Vds
gM Forward Transconductanc
0.8
Mho
Vds = 10V, Vgs = 5V
Rdson Saturation Resistanc
1
Ohm
Vgs = 20V, Ids = 4A
Idsat
Saturation Curren
4.8
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
36 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
4 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
24 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com



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F1516 pdf
POUT VS PIN GRAPH
F1516
CAPACITANCE VS VOLTAGE
25
20
15
10
5
0
0
F1516 POUT VS PIN F=500MHZ; IDQ=0.8A; VDS=28.0V
POUT
GAIN
0.5 1 1.5 2 2.5
PIN IN WATTS
POUT
GAIN
17
16
15
14
13
12
11
10
9
8
3
IV CURVE
F2A 4 DIE CAPACITANCE
100
Ciss
Coss
10
Crss
1
0 5 10 15 20 25 30
VDS IN VOLTS
ID AND GM VS VGS
6
5
4
3
2
1
0
02
VGS = 2V
F2A 4 DIE IV CURVE
46
VGS = 4V
8 10 12
VDS IN VOLTS
VGS = 6V
VGS = 8V
14 16
VGS = 10V
18 20
VGS 12V
F2A 4 DIE GM & ID vs VGS
10
Id
1
Gm
0.1
0.01
0 2 4 6 8 10 12 14 16 18
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com



Part Number F1516
Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Maker Polyfet RF Devices - Polyfet RF Devices
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