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Polyfet RF Devices
Polyfet RF Devices


F1427

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR



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F1427 pdf
polyfet rf devices
F1427
General Description
Silicon VDMOS and LDMOS
PATENTED GOLD METALIZED
transistors designed specifically
SILICON GATE ENHANCEMENT MODE
for broadband RF applications.
Suitable for Military Radios,
RF POWER VDMOS TRANSISTOR
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
250 Watts Gemini
Laser Driver and others.
"Polyfet"TM process features
Package Style AR
gold metal for greatly extended
lifetime. Low output capacitance
HIGH EFFICIENCY, LINEAR,
and high Ft enhance broadband
HIGH GAIN, LOW NOISE
performance
o
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
440 Watts
0.4 oC/W
200 oC
-65 oC to 150oC
10 A
150 V
150 V
30V
RF CHARACTERISTICS ( 250 WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gai
13
dB Idq = 1.2 A, Vds = 50.0 V, F = 150 MHz
η
VSWR
Drain Efficienc
Load Mismatch Toleranc
65 % Idq = 1.2 A, Vds = 50.0 V, F = 150 MHz
20:1 Relative Idq = 1.2 A, Vds = 50.0 V, F = 150 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdown Voltag
125
V Ids = 0.1 A, Vgs = 0V
Idss Zero Bias Drain Curren
12 mA Vds = 50.0 V, Vgs = 0V
Igss Gate Leakage Curren
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Curren
1 7 V Ids =0.15 A, Vgs = Vds
gM Forward Transconductanc
4.8 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistanc
0.25
Ohm
Vgs = 20V, Ids = 12 A
Idsat
Saturation Curren
28.8
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
270 pF Vds = 50.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
13.2
pF Vds = 50.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
120 pF Vds = 50.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 1/12/98
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com



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F1427 pdf
POUT VS PIN GRAPH
F1427
1000
CAPACITANCE VS VOLTAGE
F1E 6 DICE CAPACITANCE
Ciss
100
Crss
Coss
IV CURVE
F1E6DICE IV
30
25
20
15
10
5
0
0 2 4 6 8 10 12 14 16 18 20
VDSINVOLTS
vg=2v
Vg=4v
Vg=6v
vg=8v
vg=10v
vg=12v
S11 AND S22 SMITH CHART
10
0
5 10 15 20 25 30 35 40 45 50
VDS IN VOLTS
100.00
ID AND GM VS VGS
F1E6DICE ID&GMVsVG
10.00
Id
1.00 gM
0.10
0 2 4 6 8 10 12 14 16 18 20
Vgs in Volts
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 1/12/98
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com



Part Number F1427
Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Maker Polyfet RF Devices - Polyfet RF Devices
Total Page 2 Pages
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