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F1423

TX Differential Input RF Amplifier



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F1423 pdf
TX Differential Input RF Amplifier
GENERAL DESCRIPTION
The F1423 is a 600 MHz to 3000 MHz TX differential
input / single-ended output RF amplifier used in
transmitter applications.
The F1423 TX Amp provides 13.1 dB gain with
+41.8 dBm OIP3 and 5.1 dB noise figure at 2000 MHz.
This device uses a single 5 V supply and 120 mA of ICC.
This device is packaged in a 4mm x 4mm, 24-pin Thin
QFN with 50 ohm differential RF input and 50 ohm
single ended RF output impedances for ease of
integration into the signal-path.
COMPETITIVE ADVANTAGE
In typical Base Stations, RF Amplifiers are used in the
TX traffic paths to drive the transmit power amplifier.
The F1423 TX Amplifier offers very high reliability due
to its construction using silicon die in a QFN package.
The F1423 includes a broadband differential input to
accept AC-coupled signals directly from a balanced
modulator or RF DAC architecture.
APPLICATIONS
Multi-mode, Multi-carrier Transmitters
GSM850/900 Base Stations
PCS1900 Base Stations
DCS1800 Base Stations
WiMAX and LTE Base Stations
UMTS/WCDMA 3G Base Stations
PHS/PAS Base Stations
Public Safety Infrastructure
F1423
Datasheet
600 MHz to 3000 MHz
FEATURES
Broadband 600 MHz – 3000 MHz
13.1 dB typical gain @ 2000 MHz
5.1 dB NF @ 2000 MHz
+41.8 dBm OIP3 @ 2000 MHz
+21.5 dBm output P1dB @ 2000 MHz
Single 5 V supply voltage
ICC = 120 mA
Up to +105 °C TCASE operating temperature
50 Ω differential input impedance
50 Ω single ended output impedance
Positive gain slope for board loss
compensation
Standby mode for power savings
4 mm x 4 mm, 24-pin TQFN package
FUNCTIONAL BLOCK DIAGRAM
RFIN
R FO UT
STBY
BANDSEL
ORDERING INFORMATION
F1423NBGI8
RF Product Line
Green
Tape &
Reel
F1423, Rev O 11/6/2015
1 © 2015 Integrated Device Technology, Inc.



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F1423 pdf
F1423
ABSOLUTE MAXIMUM RATINGS
Parameter
VCC to GND
STBY, Band_Sel
RBIAS1
RBIAS2
RFIN+, RFIN-, Voltage1
RFIN+, RFIN-, Current1
RFOUT externally applied DC voltage
RF Differential Input Power
(applied for 24 hours maximum)
Continuous Power Dissipation
Junction Temperature
Storage Temperature Range
Lead Temperature (soldering, 10s)
ElectroStatic Discharge – HBM
(JEDEC/ESDA JS-001-2014)
ElectroStatic Discharge – CDM
(JESD 22-C101F)
Symbol
VCC
VCntl
IRB1
IRB2
VRFin
IRFin
VRFout
Pin
Pdiss
Tj
Tst
Min
-0.3
-0.3
-0.02
-5
VCC - 0.15
-65
Max
+5.5
VCC + 0.25
+1.5
+0.8
+0.02
+5
VCC + 0.15
+22
1.5
150
150
260
Class 2
(2000 V)
Class C3
(1000 V)
Units
V
V
mA
mA
V
mA
V
dBm
W
°C
°C
°C
Note 1: The RFIN+ and RFIN- pins connect to an internal balun that presents a very low impedance to ground.
Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at
these or any other conditions above those indicated in the operational section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL AND MOISTURE CHARACTERISTICS
θJA (Junction – Ambient)
θJC (Junction – Case) [The Case is defined as the exposed paddle]
Moisture Sensitivity Rating (Per J-STD-020)
40 °C/W
4 °C/W
MSL1
Zero-DistortionTM, TX Amplifier
2
Rev O 11/6/2015



Part Number F1423
Description TX Differential Input RF Amplifier
Maker Integrated Device Technology - Integrated Device Technology
Total Page 26 Pages
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