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Polyfet RF Devices
Polyfet RF Devices


F1415

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR



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F1415 pdf
polyfet rf devices
F1415
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" TMprocess features
gold metal for greatly extended
lifetime. Low output capacitance
and high Ft enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
150 Watts Single Ended
Package Style AM
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 Co )
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
250 Watts
0.8 oC/W
200 oC
-65 oC to 150oC
10 A
150 V
150 V
30V
RF CHARACTERISTICS ( 150WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gai
13
dB Idq = 0.6 A, Vds = 50.0 V, F = 150 MHz
η Drain Efficiency
65 % Idq = 0.6 A, Vds = 50.0 V, F = 150 MHz
VSWR Load Mismatch Toleranc
20:1 Relative Idq = 0.6 A, Vds = 50.0 V, F = 150 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdown Voltag
125
V Ids = 0.1 A, Vgs = 0V
Idss Zero Bias Drain Curren
12 mA Vds = 50.0 V, Vgs = 0V
Igss Gate Leakage Curren
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Curren
1 7 V Ids =0.15 A, Vgs = Vds
gM Forward Transconductanc
4.8
Mho
Vds = 10V, Vgs = 5V
Rdson Saturation Resistanc
0.25
Ohm
Vgs = 20V, Ids = 10 A
Idsat
Saturation Curren
28.8
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
270 pF Vds = 50.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
13.2
pF Vds = 50.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
120 pF Vds = 50.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com



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F1415 pdf
F1415
POUT VS PIN GRAPH
F1415 POUT VS PIN F=150 MHZ; IDQ=0.5A; VDS=50V
220 16.00
15.00
180
14.00
140 13.00
100
Efficiency = 60%
60
12.00
11.00
10.00
20 9.00
0 2 4 6 8 10 12 14 16 18 20
PIN IN WATTS
POUT
GAIN
IV CURVE
F1E6DICE IV
30
25
20
15
10
5
0
0 2 4 6 8 10 12 14 16 18 20
VDSINVOLTS
vg=2v
Vg=4v
Vg=6v
vg=8v
vg=10v
vg=12v
CAPACITANCE VS VOLTAGE
F1E 6 DICE CAPACITANCE
1000
Ciss
100
Crss
Coss
10
0
5 10 15 20 25 30 35 40 45 50
VDS IN VOLTS
100.00
ID AND GM VS VGS
F1E6DICE ID&GMVsVG
10.00
Id
1.00 gM
0.10
0 2 4 6 8 10 12 14 16 18 20
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com



Part Number F1415
Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Maker Polyfet RF Devices - Polyfet RF Devices
Total Page 2 Pages
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