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Polyfet RF Devices
Polyfet RF Devices


F1280

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR



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F1280 pdf
polyfet rf devices
F1280
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" TMprocess features
gold metal for greatly extended
lifetime. Low output capacitance
and high Ft enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
80 Watts Single Ended
Package Style AT
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 Co )
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
190 Watts
0.9 oC/W
200 oC
-65 oC to 150oC
12 A
50 V
50 V 30V
RF CHARACTERISTICS ( 80WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gai
10
dB Idq = 2.4 A, Vds = 12.5 V, F = 175 MHz
η Drain Efficiency
60 % Idq = 2.4 A, Vds = 12.5 V, F = 175 MHz
VSWR Load Mismatch Toleranc
20:1 Relative Idq = 2.4 A, Vds = 12.5 V, F = 175 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdown Voltag
40
V Ids = 0.3 A, Vgs = 0V
Idss Zero Bias Drain Curren
6 mA Vds = 12.5 V, Vgs = 0V
Igss Gate Leakage Curren
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Curren
1 7 V Ids = 0.6 A, Vgs = Vds
gM Forward Transconductanc
4.8
Mho
Vds = 10V, Vgs = 5V
Rdson Saturation Resistanc
0.15
Ohm
Vgs = 20V, Ids = 48 A
Idsat
Saturation Curren
45
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
240 pF Vds = 12.5 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
36
pF Vds = 12.5 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
180 pF Vds = 12.5 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com



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F1280 pdf
F1280
POUT VS PIN GRAPH
90
80
70
60
50
40
30
20
10
0
0
F1280 POUT VS PIN F=175 MHZ; IDQ=2.4A;
VDS=12.5V
Efficiency = 65%
246
PIN IN WATTS
17.00
16.00
15.00
14.00
13.00
12.00
11.00
10.00
9.00
8.00
8 10 12
POUT
GAIN
IV CURVE
CAPACITANCE VS VOLTAGE
F1C 6DIE CAPACITANCE
1000
Coss
Ciss
100
Crss
10
0
5 10 15 20 25
VDS IN VOLTS
ID AND GM VS VGS
30
60
50
40
30
20
10
0
0
F1C 6 DIE IV CURVE
246
Vg = 2V
Vg = 4V
8 10 12 14 16
Vds in Volts
Vg = 6V
Vg = 8V
Vg = 10V
18 20
Vg = 12V
F1C 6 DICE ID & GM VS VG
100
Id
10
1
Gm
0.1
0 2 4 6 8 10 12 14 16 18 20
Vgs in Volts
GM ID
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com



Part Number F1280
Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Maker Polyfet RF Devices - Polyfet RF Devices
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