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Polyfet RF Devices
Polyfet RF Devices


F1222

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR


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F1222 pdf
polyfet rf devices
F1222
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" TMprocess features
gold metal for greatly extended
lifetime. Low output capacitance
and high Ft enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
20 Watts Single Ended
Package Style AP
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 Co )
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
80 Watts
2.1 oC/W
200 oC
-65 oC to 150oC
4A
50 V
50 V 30V
RF CHARACTERISTICS ( 20WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gai
10
dB Idq = 0.8 A, Vds = 12.5 V, F = 400 MHz
η Drain Efficiency
60 % Idq = 0.8 A, Vds = 12.5 V, F = 400 MHz
VSWR Load Mismatch Toleranc
20:1 Relative Idq = 0.8 A, Vds = 12.5 V, F = 400 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdown Voltag
40
V Ids = 0.1 A, Vgs = 0V
Idss Zero Bias Drain Curren
2 mA Vds = 12.5 V, Vgs = 0V
Igss Gate Leakage Curren
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Curren
1 7 V Ids = 0.2 A, Vgs = Vds
gM Forward Transconductanc
1.6
Mho
Vds = 10V, Vgs = 5V
Rdson Saturation Resistanc
0.45
Ohm
Vgs = 20V, Ids = 16 A
Idsat
Saturation Curren
15
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
80 pF Vds = 12.5 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
12
pF Vds = 12.5 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
60 pF Vds = 12.5 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com



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F1222 pdf
F1222
POUT VS PIN GRAPH
25
20
15
10
5
0
0
F1222 POUT VS PIN F=400 MHZ; IDQ=0.8A;
VDS=12.5V
Efficiency = 65%
0.5 1 1.5
PIN IN WATTS
2
2.5
POUT
22.00
20.00
18.00
16.00
14.00
12.00
10.00
8.00
3
GAIN
IV CURVE
CAPACITANCE VS VOLTAGE
F1C 2DIE CAPACITANCE
1000
100
Coss
Ciss
10 Crss
1
0 5 10 15 20 25
VDS IN VOLTS
ID AND GM VS VGS
30
16
14
12
10
8
6
4
2
0
0
2
Vg = 2V
F1C 2 DIE IV CURVE
46
Vg = 4V
8 10 12
Vds in Volts
Vg = 6V
Vg = 8V
14 16
Vg = 10V
18 20
Vg = 12V
F1C 2 DIE GM & ID vs VGS
100
Id
10
Gm
1
0.1
0 2 4 6 8 10 12 14
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com



Part Number F1222
Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Maker Polyfet RF Devices - Polyfet RF Devices
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