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Polyfet RF Devices
Polyfet RF Devices


F1210

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR



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F1210 pdf
polyfet rf devices
F1210
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" TMprocess features
gold metal for greatly extended
lifetime. Low output capacitance
and high Ft enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
10 Watts Single Ended
Package Style AA
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 Co )
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
60 Watts
3.12 oC/W
200 oC
-65 oC to 150oC
2A
50 V
50 V 30V
RF CHARACTERISTICS ( 10WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gai
10
dB Idq = 0.4 A, Vds = 12.5 V, F = 175 MHz
η Drain Efficiency
60 % Idq = 0.4 A, Vds = 12.5 V, F = 175 MHz
VSWR Load Mismatch Toleranc
20:1 Relative Idq = 0.4 A, Vds = 12.5 V, F = 175 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdown Voltag
40
V Ids = 0.05 A, Vgs = 0V
Idss Zero Bias Drain Curren
1 mA Vds = 12.5 V, Vgs = 0V
Igss Gate Leakage Curren
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Curren
1 7 V Ids = 0.1 A, Vgs = Vds
gM Forward Transconductanc
0.8
Mho
Vds = 10V, Vgs = 5V
Rdson Saturation Resistanc
0.7
Ohm
Vgs = 20V, Ids = 8A
Idsat
Saturation Curren
7.5
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
40 pF Vds = 12.5 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
6 pF Vds = 12.5 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
30 pF Vds = 12.5 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com



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F1210 pdf
POUT VS PIN GRAPH
F1210
F1210 POUT VS PIN F=250 MHZ; IDQ=0.4A; VDS=12.5V
20
18
16
14
12
10
8
6
4
2
0
0
GAIN
POUT
1
Efficiency = 65%
23
PIN IN WATTS
4
POUT
GAIN
5
IV CURVE
16
14
12
10
8
6
4
6
100
10
1
0
8
7
6
5
4
3
2
1
0
02
Vg = 2V
F1C 1DIE IV CURVE
46
Vg = 4V
8 10 12 14 16
Vds in Volts
Vg = 6V
Vg = 8V
Vg = 10V
18 20
Vg = 12V
10
1
0.1
0
CAPACITANCE VS VOLTAGE
F1C 1DIE CAPACITANCE
Coss
Ciss
Crss
5 10 15 20 25 30
VDS IN VOLTS
ID AND GM VS VGS
F1C 1DIE GM & ID vs VGS
Id
Gm
2 4 6 8 10 12 14
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com



Part Number F1210
Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Maker Polyfet RF Devices - Polyfet RF Devices
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