http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf



Fairchild Semiconductor Electronic Components Datasheet



F11N60F

FCPF11N60F



No Preview Available !

F11N60F pdf
SuperFETTM
FCP11N60F/FCPF11N60F
600V N-Channel MOSFET
Features
• 650V @TJ = 150°C
• Typ. RDS(on) = 0.32
• Fast Recovery Type ( trr = 120ns)
• Ultra Low Gate Charge (typ. Qg = 40nC)
• Low Effective Output Capacitance (typ. Cosseff.=95pF)
• 100% avalanche tested
Description
SuperFETTM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
GDS
TO-220
Absolute Maximum Ratings
GD S
TO-220F
D
!
"
!"
G!
"
"
!
S
Symbol
Parameter
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction termperature.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FCP11N60F FCPF11N60F
11 11 *
7 7*
33 33 *
± 30
340
11
12.5
4.5
125 36 *
1.0 0.29 *
-55 to +150
300
Units
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
FCP11N60F
1.0
0.5
62.5
FCPF11N60F
3.5
--
62.5
Units
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
FCP11N60F/FCPF11N60F Rev. A
1
www.fairchildsemi.com
Free Datasheet http://www.datasheetlist.com/



No Preview Available !

F11N60F pdf
Package Marking and Ordering Information
Device Marking
FCP11N60F
FCPF11N60F
Device
FCP11N60F
FCPF11N60F
Package
TO-220
TO-220F
Reel Size
--
--
Tape Width
--
--
Quantity
50
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
BVDSS/
TJ
BVDS
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
VGS = 0 V, ID = 250 µA, TJ = 25°C
VGS = 0 V, ID = 250 µA, TJ = 150°C
ID = 250 µA, Referenced to 25°C
VGS = 0 V, ID = 11 A
600
--
--
--
IDSS Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 5.5 A
--
--
--
--
3.0
--
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40 V, ID = 5.5 A
(Note 4)
--
Ciss
Coss
Crss
Coss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDS = 480 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
--
Coss eff. Effective Output Capacitance
Switching Characteristics
VDS = 0V to 480 V, VGS = 0 V
--
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 300 V, ID = 11 A,
RG = 25
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS = 480 V, ID = 11 A,
VGS = 10 V
Qgd Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 11 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 11 A,
dIF / dt = 100 A/µs
(Note 4)
--
--
--
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS = 5.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 11A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
Typ.
--
650
0.6
700
--
--
--
--
--
0.32
9.7
1148
671
63
35
95
34
98
119
56
40
7.2
21
--
--
--
120
0.8
Max. Units
--
--
--
--
10
100
100
-100
V
V
V/°C
V
µA
µA
nA
nA
5.0
0.38
--
V
S
1490
870
82
--
--
pF
pF
pF
pF
pF
80 ns
205 ns
250 ns
120 ns
52 nC
-- nC
-- nC
11 A
33 A
1.4 V
-- ns
-- µC
FCP11N60F/FCPF11N60F Rev. A
2
www.fairchildsemi.com
Free Datasheet http://www.datasheetlist.com/



Part Number F11N60F
Description FCPF11N60F
Maker Fairchild Semiconductor - Fairchild Semiconductor
Total Page 10 Pages
PDF Download
F11N60F pdf
Download PDF File
F11N60F pdf
View for Mobile




Featured Datasheets

Part Number Description Manufacturers PDF
F11N60F FCPF11N60F F11N60F
Fairchild Semiconductor
PDF


Part Number Start With

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z

site map

webmaste! click here

contact us

Buy Components