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Polyfet RF Devices
Polyfet RF Devices


F1170

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR


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F1170 pdf
polyfet rf devices
F1170
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" TMprocess features
gold metal for greatly extended
lifetime. Low output capacitance
and high Ft enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
200 Watts Gemini
Package Style AH
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 Co )
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
380 Watts
0.45 oC/W
200 oC
-65 oC to 150oC
16 A
70 V
70 V 30V
RF CHARACTERISTICS ( 200WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gai
13
dB Idq = 1.6 A, Vds = 28.0 V, F = 175 MHz
η Drain Efficiency
55 % Idq = 1.6 A, Vds = 28.0 V, F = 175 MHz
VSWR Load Mismatch Toleranc
20:1 Relative Idq = 1.6 A, Vds = 28.0 V, F = 175 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdown Voltag
65
V Ids = 0.2 A, Vgs = 0V
Idss Zero Bias Drain Curren
4 mA Vds = 28.0 V, Vgs = 0V
Igss Gate Leakage Curren
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Curren
1 7 V Ids = 0.4 A, Vgs = Vds
gM Forward Transconductanc
4
Mho
Vds = 10V, Vgs = 5V
Rdson Saturation Resistanc
0.35
Ohm
Vgs = 20V, Ids = 16 A
Idsat
Saturation Curren
24
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
160 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
20
pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
120 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com



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F1170 pdf
F1170
POUT VS PIN GRAPH
F1170 POUT VS PIN F=175
MHZ; IDQ=1.6A; VDS=28.0V
300 20.00
19.00
250
18.00
200 17.00
16.00
150
15.00
100
Efficiency = 55%
50
14.00
13.00
12.00
0 11.00
0 2 4 6 8 10 12 14 16 18
PIN IN WATTS
POUT
GAIN
IV CURVE
F1J4DICEIV
35
30
25
20
15
10
5
0
0 2 4 6 8 10 12 14 16 18 20
VDSINVOLTS
vg=2v
Vg=4v
Vg=6v
vg=8v
vg=10v
vg=12v
CAPACITANCE VS VOLTAGE
F1J 4 DICE CAPACITANCE
1000
Ciss
100
Coss
Crss
10
1
0
100.00
10.00
1.00
5 10 15 20 25
VDS IN VOLTS
ID AND GM VS VGS
F1J4DICE ID&GMVsVG
Id
gM
30
0.10
0 2 4 6 8 10 12 14 16 18
Vgs inVolts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com



Part Number F1170
Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Maker Polyfet RF Devices - Polyfet RF Devices
Total Page 2 Pages
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