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Thinki Semiconductor
Thinki Semiconductor


F10P60F

10 Ampere Dual Common Cathode Ultra Fast Recovery Half Bridge Rectifiers



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F10P60F pdf
F10P20F thru F10P60F
®
Pb Free Plating Product
F10P20F thru F10P60F
Pb
10 Ampere Dual Common Cathode Ultra Fast Recovery Half Bridge Rectifiers
Features
Latest GPP technology with super fast recovery time
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS,EPS and UPS
Car Audio Amplifiers and Sound Device Systems
ITO-220AB
Unit:mm
Mechanical Data
Case: Fully Insulated Molding TO-220F
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.0 gram approximately
Case
Case
Case
Case
Positive
Negative
Doubler
Series Connection
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "F"
Suffix "FR"
Suffix "FD"
Suffix "FS"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL F10P20F F10P40F F10P60F UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=100oC
VRRM
VRMS
VDC
IF(AV)
200
140
200
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
Maximum Instantaneous Forward Voltage
@ 5.0 A
VF
0.98
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
IR
Trr
CJ
R JC
TJ, TSTG
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
400
280
400
10.0
100
1.3
5.0
100
35
65
2.2
-55 to +150
600 V
420 V
600 V
A
A
1.7 V
uA
uA
nS
pF
oC/W
oC
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/



No Preview Available !

F10P60F pdf
F10P20F thru F10P60F
®
FIG.1 - FORWARD CURRENT DERATING CURVE
10
8
6
4
2
60 Hz Resistive or
Inductive load
0
0 50
100
CASE TEMPERATURE, oC
150
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
50
F10P20F
F10P40F
5 F10P60F
1
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
100 Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
80
60
40
20
0
1 10 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
TJ=125oC
100
10
TJ=25oC
1
0.1
0
20 40 60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0 4.0 10
REVERSE VOLTAGE, VOLTS
100
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/2
http://www.thinkisemi.com/



Part Number F10P60F
Description 10 Ampere Dual Common Cathode Ultra Fast Recovery Half Bridge Rectifiers
Maker Thinki Semiconductor - Thinki Semiconductor
Total Page 2 Pages
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