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Pan Jit International
Pan Jit International


F10N65

PJF10N65



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F10N65 pdf
PJP10N65 / PJF10N65
650V N-Channel Enhancement Mode MOSFET
FEATURES
• 10A , 650V, RDS(ON)=1.0@VGS=10V, ID=5.0A
TO-220AB / ITO-220AB
TO-220AB
• Low ON Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charge and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
3
2
S
1D
G
ITO-220AB
1
2
3
D
S
G
MECHANICAL DATA
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM
2 Drain
ORDERING INFORMATION
TYPE
PJP10N65
MARKING
P10N65
PJF10N65
F10N65
PACKAGE
TO-220AB
ITO-220AB
PACKING
50PCS/TUBE
50PCS/TUBE
1
Gate
3 Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER
Symbol PJP10N65 PJF10N65
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS +30
Continuous Drain Current
ID 10
10
Pulsed Drain Current 1)
Maximum Power Dissipation
Derating Factor
TA= 2 5 OC
IDM
PD
40
156
1.25
40
50
0.4
Op e ra ti ng Junc ti o n a nd S to r a g e Te mp e ra tur e Ra ng e
Avalanche Energy with Single Pulse
IAS=10A, VDD=90V, L=13mΗ
Junction-to-Case Thermal Resistance
TJ,TSTG
E AS
RθJC
-55 to +150
750
0.8 2.5
Junction-to Ambient Thermal Resistance
Note : 1. Maximum DC current limited by the package
RθJA
62.5
100
Uni ts
V
V
A
A
W
OC
mJ
OC /W
OC /W
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-DEC.25.2009
PAGE . 1



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F10N65 pdf
PJP10N65 / PJF10N65
ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted )
Parameter
Static
Symbol
Te s t C o nd i ti o n
Drain-Source Breakdown Voltag e
Gate Threshold Voltage
Drain-Source On-State
Resistance
Zero Gate Voltage Drain
C urre nt
Gate Body Leakage
Dynamic
B V DSS
V GS(th)
R D S ( o n)
I DSS
I GSS
VGS=0V, I D=250uA
VDS=VGS, I D=250uA
VGS= 10V, I D= 5.0A
VDS=650V, VGS=0V
VGS=+30V, VDS=0V
To ta l Ga te C ha rg e
Gate-Source Charge
Gate-Drain Charge
Turn-On D e la y Ti me
Turn-On Ri s e Ti me
Turn-Off D e la y Ti me
Turn-Off F a ll Ti me
Input Capacitance
Output Capacitance
Reverse Tra nsfer
C a p a c i ta nc e
Source-Drain Diode
Qg
Q gs
Q gd
t d(on)
tr
t d(off)
tf
C iss
C oss
C rss
V DS=520V, ID=10A ,
V GS= 1 0 V
VDD=325V, ID =10A
V GS=1 0 V, RG=25
VDS=25V, VGS=0V
f=1.0MHZ
Max. Diode Forward Current
IS
-
Max.Pulsed Source Current
I SM
-
Diode Forward Voltage
V SD
IS=10A , V GS=0V
Re ve rse Re co ve ry Ti me
Reverse Recovery Charge
t rr
Q rr
V GS=0V, IF=10A
d i /d t=1 0 0 A /us
NOTE : Plus Test : Pluse Width < 300us, Duty Cycle < 2%.
Mi n. Typ . Ma x. Uni ts
650 -
-V
2.0 - 4.0 V
- 0.85 1.0
- - 10 uA
- - +100 nΑ
-
38.6
52
- 8.4 - nC
- 9.8 -
- 14.8 22
- 22.6 36
ns
-
48.2
90
-
26.8
42
- 1450 2020
- 120 165 p F
- 12 16
- - 10 A
- - 40 A
- - 1.4 V
- 450 - ns
- 4.2 - uC
STAD-DEC.25.2009
PAGE . 2



Part Number F10N65
Description PJF10N65
Maker Pan Jit International - Pan Jit International
Total Page 6 Pages
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