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Polyfet RF Devices
Polyfet RF Devices


F1081

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR


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F1081 pdf
polyfet rf devices
F1081
General Description
Silicon VDMOS and LDMOS
PATENTED GOLD METALIZED
transistors designed specifically
SILICON GATE ENHANCEMENT MODE
for broadband RF applications.
Suitable for Military Radios,
RF POWER VDMOS TRANSISTOR
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
200 Watts Gemini
Laser Driver and others.
"Polyfet"TM process features
Package Style AR
gold metal for greatly extended
lifetime. Low output capacitance
HIGH EFFICIENCY, LINEAR,
and high Ft enhance broadband
HIGH GAIN, LOW NOISE
performance
o
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
350 Watts
0.5 oC/W
200 oC
-65 oC to 150oC
16 A
70 V
70 V 30V
RF CHARACTERISTICS ( 200 WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gai
13
dB Idq = 1.6 A, Vds = 28.0 V, F = 175 MHz
η
VSWR
Drain Efficienc
Load Mismatch Toleranc
60 % Idq = 1.6 A, Vds = 28.0 V, F = 175 MHz
20:1 Relative Idq = 1.6 A, Vds = 28.0 V, F = 175 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdown Voltag
65
V Ids = 0.2 A, Vgs = 0V
Idss Zero Bias Drain Curren
4 mA Vds = 28.0 V, Vgs = 0V
Igss Gate Leakage Curren
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Curren
1 7 V Ids = 0.4 A, Vgs = Vds
gM Forward Transconductanc
3.2 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistanc
0.35
Ohm
Vgs = 20V, Ids = 16 A
Idsat
Saturation Curren
22
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
132 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
16 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
80 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 1/12/98
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com



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F1081
POUT VS PIN GRAPH
F-1081 POUT vs PIN
F=175 MHZ; IDQ=1.6A; VDS=28V
GAIN
POUT
Efficiency = 66.67%
2 4 6 8 10 12 14
PIN IN WATTS
IV CURVE
17
16
15
14
13
12
11
10
16
1000
100
10
0
30
25
20
15
10
5
0
0
2
Vg = 2V
F1B 4DIE IV CURVE
46
Vg = 4V
8 10 12
Vds in Volts
Vg = 6V
Vg = 8V
14 16
Vg = 10V
18 20
Vg = 12V
100
10
1
0.1
0
CAPACITANCE VS VOLTAGE
F1B 4DIE CAPACITANCE
Coss
Ciss
Crss
5 10 15 20 25 30
VDS IN VOLTS
ID AND GM VS VGS
F1B 4 DIE GM & ID vs VGS
Id
Gm
2 4 6 8 10 12 14
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 1/12/98
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com



Part Number F1081
Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Maker Polyfet RF Devices - Polyfet RF Devices
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