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Osram Opto Semiconductors
Osram Opto Semiconductors


F1047A

Infrared Emitting Diode Chip



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F1047A pdf
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GaAlAs-Infrarot-Lumineszenzdiode (880 nm)
GaAlAs Infrared Emitting Diode (880 nm)
F 1047A
F 1047B
Vorläufige Daten / Preliminary Data
Wesentliche Merkmale
• Typ. Gesamtleistung: 22 mW @ 100 mA im
TOPLED® Gehäuse
Chipgröße 300 x 300 µm2
GaAlAs-LED mit sehr hohem Wirkungsgrad
Hohe Zuverlässigkeit
Hohe Impulsbelastbarkeit
Gute spektrale Anpassung an
Si-Fotoempfänger
Vorderseitenmetallisierung: Aluminium
Rückseitenmetallisierung: Goldlegierung
Lieferung: vereinzelt auf Folie
Features
Typ. total radiant power: 22 mW @ 100 mA in
TOPLED® package.
Chipsize: 300 x 300 µm²
Very highly efficient GaAlAs LED
High reliability
High pulse handling capability
Good spectral match to silicon photodetectors
Frontside metallization: aluminum
Backside metallization: gold alloy
Delivery: diced on foil
Anwendungen
IIR-Fernsteuerung von Fernseh-, Rundfunk-
und Videogeräten, Lichtdimmern
Gerätefernsteuerungen für Gleich- und
Wechsellichtbetrieb
Lichtschranken bis 500 kHz
Sensorik
Diskrete Optokoppler
Applications
IR remote control for hifi and TV sets, video
tape recorder, dimmers
Remote control for steady and varying
intensity
Light-reflection switches (max. 500 kHz)
Sensor technology
Discrete optocouplers
Typ
Type
F 1047A
F 1047B
Bestellnummer
Ordering Code
Q67220-C1386
on request
Beschreibung
Description
Infrarot emittierender Chip, Oberseite Kathodenanschluss
Infrared emitting die, top side cathode connection
Infrarot emittierender Chip, Oberseite Kathodenanschluss,
Oberfläche aufgerauht.
Infrared emitting die, top side cathode connection, surface
frosted
2003-04-11
1



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F1047A pdf
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F 1047A, F 1047B
Elektrische Werte (TA = 25 °C)
Electrical values1) (TA = 25 °C)
Bezeichnung
Parameter
Emissionswellenlänge
Peak wavelength
IF = 10 mA
Spektrale Bandbreite bei 50% von Imax,
Spectral bandwidth at 50% of Imax
IF = 10 mA
Schaltzeiten, Ie von 10% auf 90% und von 90% auf
10%, bei IF = 100 mA, RL = 50
Switching times, Ie from 10% to 90% and from 90%
to 10%, IF = 100 mA, RL = 50
Sperrspannung
Reverse voltage
IR = 1µA
Durchlaβspannung
Forward voltage
IF = 100 mA
Strahlungsleistung
Radiant Power3)
IF = 100 mA
F1047A
F1047B
Symbol
Symbol
λpeak
∆λ
tr, tf
VR
VF
Φe
min.
5
Wert
Value2)
typ.
880
max.
Einheit
Unit
nm
100 nm
0.5/0.4
µs
V
1.9 V
12 mW
14 mW
Photostrom (Spezifikationsparameter)
Photocurrent (specified parameter)
IF = 100 mA
F1047A
F1047B
Ie
0.50
0.65
a.u.
a.u.
1) Measurement limits describe actual settings and do not include measurement uncertainties. Each wafer and each
fragment of a wafer is subject to final testing. The wafer or its pieces are individually attached on foils (ring). Sample
chips are picked from each foil and placed on a special carrier for measurement purposes. The sampling density is one
chip per 1cm². If a sample fails, the area around that sample is tested again by taking samples in fourfold density. If a
sample fails in that measurement, an area of 0,25 cm² around each failed sample is marked by pen.
All el. values are referenced to the vendor's measurement system (correlation to customer product(s) is required)
2) Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information.
This is not a specified value
3) Radiant power is measured on TO-18 header in integrating sphere.
2003-04-11
2



Part Number F1047A
Description Infrared Emitting Diode Chip
Maker Osram Opto Semiconductors - Osram Opto Semiconductors
Total Page 6 Pages
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