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Intel Corporation
Intel Corporation



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E28F004BL-T150 pdf
4-MBlT (256K x 16 512K x 8)
28F400BL-T B 28F004BL-T B
Y Low Voltage Operation for Very
Low-Power Portable Applications
VCC e 3 0V – 3 6V Read
VCC e 3 15V – 3 6V Program Erase
Y Expanded Temperature Range
b20 C to a70 C
Y x8 x16 Input Output Architecture
28F400BL-T 28F400BL-B
For High Performance and High
Integration 16-bit and 32-bit CPUs
Y x8-only Input Output Architecture
28F004BL-T 28F004BL-B
For Space Constrained 8-bit
Y Upgradeable to Intel’s SmartVoltage
Y Optimized High Density Blocked
One 16-KB Protected Boot Block
Two 8-KB Parameter Blocks
One 96-KB Main Block
Three 128-KB Main Blocks
Top or Bottom Boot Locations
Y Extended Cycling Capability
10 000 Block Erase Cycles
Y Automated Word Byte Write and Block
Command User Interface
Status Registers
Erase Suspend Capability
Y SRAM-Compatible Write Interface
Y Automatic Power Savings Feature
0 8 mA typical ICC Active Current in
Static Operation
Y Very High-Performance Read
150 ns Maximum Access Time
65 ns Maximum Output Enable Time
Y Low Power Consumption
15 mA Typical Active Read Current
Y Reset Deep Power-Down Input
0 2 mA ICC Typical
Acts as Reset for Boot Operations
Y Write Protection for Boot Block
Y Hardware Data Protection Feature
Erase Write Lockout During Power
Y Industry Standard Surface Mount
44-Lead PSOP
56-Lead TSOP
28F004BL 40-Lead TSOP
Y 12V Word Byte Write and Block Erase
VPP e 12V g5% Standard
Y ETOXTM III Flash Technology
3 3V Read
Other brands and names are the property of their respective owners
Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or
copyright for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products Intel retains the right to make
changes to these specifications at any time without notice Microcomputer Products may have minor variations to this specification known as errata
November 1995
Order Number 290450-005

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E28F004BL-T150 pdf
28F400BL-T B 28F004BL-T B
Intel’s 4-Mbit Low Power Flash Memory Family is an extension of the Boot Block Architecture which includes
block-selective erasure automated write and erase operations and standard microprocessor interface The
4-Mbit Low Power Flash Memory Family enhances the Boot Block Architecture by adding more density and
blocks x8 x16 input output control very low power very high speed an industry standard ROM compatible
pinout and surface mount packaging The 4-Mbit low power flash family opens a new capability for 3V battery-
operated portable systems and is an easy upgrade to Intel’s 2-Mbit Low Power Boot Block Flash Memory
The Intel 28F400BL-T B are 16-bit wide low power flash memory offerings These high density flash memories
provide user selectable bus operation for either 8-bit or 16-bit applications The 28F400BL-T and 28F400BL-B
are 4 194 304-bit non-volatile memories organized as either 524 288 bytes or 262 144 words of information
They are offered in 44-Lead plastic SOP and 56-Lead TSOP packages The x8 x16 pinout conforms to the
industry standard ROM EPROM pinout The Intel 28F004BL-T B are 8-bit wide low power flash memories
with 4 194 304 bits organized as 524 288 bytes of information They are offered in a 40-Lead TSOP package
which is ideal for space-constrained portable systems
These devices use an integrated Command User Interface (CUI) and Write State Machine (WSM) for simplified
word byte write and block erasure The 28F400BL-T 28F004BL-T provide block locations compatible with
Intel’s Low Voltage MCS-186 family i386TM i486TM microprocessors The 28F400BL-B 28F004BL-B provide
compatibility with Intel’s 80960KX and 80960SX families as well as other low voltage embedded microproces-
The boot block includes a data protection feature to protect the boot code in critical applications With a
maximum access time of 150 ns these 4-Mbit low power flash devices are very high performance memories at
3 3V which interface to a wide range of low voltage microprocessors and microcontrollers A deep power-
down mode lowers the total VCC power consumption to 0 66 mW which is critical in handheld battery powered
systems such as Handy Cellular Phones For very high speed applications using a 5V supply refer to the Intel
28F400BX-T B 28F004BX-T B 4-Mbit Boot Block Flash Memory family datasheet
Manufactured on Intel’s 0 8 micron ETOX III process the 4-Mbit flash memory family provides world class
quality reliability and cost-effectiveness at the 4 Mbit density level

Part Number E28F004BL-T150
Description 4-MBlT (256K x 16/ 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY
Maker Intel Corporation - Intel Corporation
Total Page 30 Pages
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E28F004BL-T150 4-MBlT (256K x 16/ 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY E28F004BL-T150
Intel Corporation

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