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KEC
KEC


E25A2CS

STACK SILICON DIFFUSED DIODE



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E25A2CS pdf
SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : IF(AV)=25A.
Repetitive Peak Reverse Voltage : VRRM=200V.
POLARITY
E30A2CS (+ Type)
E30A2CR (- Type)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Average Forward Current
Peak 1 Cycle Surge Current
Junction Temperature
Storage Temperature Range
SYMBOL
VRRM
IF(AV)
IFSM
Tj
Tstg
RATING
200
25
250 (60Hz)
-40 150
-40 150
UNIT
V
A
A
E25A2CS, E25A2CR
STACK SILICON DIFFUSED DIODE
A3
A2
D3 A1
E FG
DIM
A1
A2
A3
B1
B2
C1
C2
D1
MILLIMETERS
10.0 +_0.3
13.5 +_0.3
24.0 +_0.5
8.5 +_0.3
10.0 +_ 0.3
2.0 +_ 0.3
5.0 +_0.3
2.5+_ 0.3
DIM
D2
D3
E
F
G
H
T
MILLIMETERS
5.0 +_0.3
4.5+_ 0.3
1.9+_ 0.3
9.0 +_0.3
1.0+_ 0.3
4.4+_ 0.5
0.6+_ 0.3
MR
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Peak Forward Voltage
Reverse Voltage
Repetitive Peak Reverse Current
Reverse Recovery Time
VFM
VR
IRRM
trr
Thermal Resistance
Rth(j-c)
TEST CONDITION
IFM=100A
IR=5mA
VRRM=200V
IF=0.1A, IR=0.1A
DC total junction to case
MIN.
-
200
-
-
-
TYP.
-
-
-
-
-
MAX.
1.30
-
50
15
1.0
UNIT
V
V
A
S
/W
2007. 12. 10
Revision No : 0
1/2



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E25A2CS pdf
E25A2CS, E25A2CR
I F - VF
1000
100
10
1
0.7 0.8 0.9 1 1.1 1.2
FORWARD VOLTAGE V F (V)
I F(AV) - Ta
40
Ta=Tc
30
20
10
0
0 40 80 120 160
AMBIENT TEMPERATURE Ta ( C)
2007. 12. 10
Revision No : 0
2/2



Part Number E25A2CS
Description STACK SILICON DIFFUSED DIODE
Maker KEC - KEC
Total Page 2 Pages
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