http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf



Toshiba Electronic Components Datasheet



D1415A

2SD1415A



No Preview Available !

D1415A pdf
2SD1415A
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD1415A
High-Power Switching Applications
Hammer Drive, Pulse Motor Drive Applications
Unit: mm
High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A)
Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
VCBO
VCEO
VEBO
IC
ICP
IB
PC
120 V
100 V
6V
7
A
10
0.7 A
2.0
W
25
JEDEC
JEITA
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
55 to 150
°C
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
≈ 5 kΩ
≈ 150 Ω
Emitter
1 2009-12-21



No Preview Available !

D1415A pdf
Electrical Characteristics (Ta = 25°C)
2SD1415A
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
VCB = 100 V, IE = 0
VEB = 6 V, IC = 0
IC = 50 mA, IB = 0
VCE = 3 V, IC = 3 A
VCE = 3 V, IC = 6 A
IC = 3 A, IB = 6 mA
IC = 3 A, IB = 6 mA
Min
0.75
100
2000
1000
Typ. Max
100
3.0
――
15000
――
0.9 1.5
1.5 2.0
Unit
μA
mA
V
V
V
Turn-on time
Switching time Storage time
Fall time
ton
Input IB1
Output 0.3
tstg
20 μs
IB2
5.1
μs
VCC ≈ 45 V
tf IB1 = 6 mA,IB2 = 6 mA
duty cycle 1%
0.6
Marking
D1415A
Part No. (or abbreviation code)
Lot No.
Note 2
Note2: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2 2009-12-21



Part Number D1415A
Description 2SD1415A
Maker Toshiba - Toshiba
Total Page 5 Pages
PDF Download
D1415A pdf
Download PDF File
D1415A pdf
View for Mobile



Featured Datasheets

Part Number Description Manufacturers PDF
D1410 Silicon NPN Darlington Power Transistor D1410
INCHANGE
PDF
D1410A 2SD1410A D1410A
Toshiba Semiconductor
PDF
D1411 2SD1411 D1411
SavantIC
PDF
D1411A 2SD1411A D1411A
Toshiba
PDF
D1413 2SD1413 D1413
Inchange Semiconductor
PDF
D1414 KTD1414 D1414
KEC
PDF


Part Number Start With

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z

site map

webmaste! click here

contact us

Buy Components