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SavantIC
SavantIC


D1406

2SD1406



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D1406 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1406
DESCRIPTION
www.dat·aWshiethet4TuO.co-2m20Fa package
·Collector power dissipation
:PC=25W@TC=25
·Low collector saturation voltage
·Complement to type 2SB1015
APPLICATIONS
·For audio frequency power
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
·
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector -emitter voltage
VEBO
Emitter-base voltage
IC Collector current
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
60
60
7
3
0.5
2.0
25
150
-55~150
UNIT
V
V
V
A
A
W
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No Preview Available !

D1406 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1406
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A
VBE Base-emitter voltage
IC=0.5A ; VCE=5V
ICBO Collector cut-off current
VCB=60V; IE=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=5V
hFE-2
DC current gain
IC=3A ; VCE=5V
fT Transition frequency
IC=0.5A; VCE=5V
COB Collector output capacitance
IE=0 ;f=1MHz ; VCB=10V
Switching times
ton Trun-on time
ts Storage time
tf Fall time
RL=15A;VCC=30V
IB1=-IB2=0.2A
MIN TYP. MAX UNIT
60 V
0.25 1.0
V
0.7 1.0
V
100 µA
100 µA
60 300
20
3 MHz
70 pF
0.8 µs
1.5 µs
0.8 µs
hFE-1 Classifications
O Y GR
60-120 100-200 150-300
2
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Part Number D1406
Description 2SD1406
Maker SavantIC - SavantIC
Total Page 4 Pages
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