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Sanyo Electric Components Datasheet


D1395

2SD1395



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D1395 pdf
Ordering number:EN1221C
NPN Triple Diffused Planar Silicon Darlington Transistor
2SD1395
Driver Applications
Applications
· Suitable for use in switching of L load (motor
drivers, printer hammer drivers, relay drivers).
Package Dimensions
unit:mm
2010C
Features
· High DC current gain.
· Large current capacity
· Wide ASO.
· On-chip Zener diode of 60±10V between collector
and base.
· Uniformity in collector-to-base breakdown voltage
due to adoption of accurate impurity diffusion
process.
· High inductive load handling capability.
Specifications
[2SD1395]
10.2
3.6 5.1
4.5
1.3
1.2
0.8
123
2.55 2.55
0.4 1 : Base
2 : Collector
3 : Emitter
JEDEC : TO-220AB
EIAJ : SC-46
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
* : With Zener diode of (60±10V).
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25˚C
Conditions
Ratings
50*
50*
6
5
8
0.5
40
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO
IEBO
hFE
fT
VCE(sat)
VBE(sat)
VCB=40V, IE=0
VEB=5V, IC=0
VCE=3V, IC=2.5A
VCE=5V, IC=2.5A
IC=2.5A, IB=5mA
IC=2.5A, IB=5mA
Ratings
min typ max
Unit
100 µA
3 mA
1000 4000
20 MHz
0.9 1.5 V
2.0 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21599TH (KT)/91096TS (KOTO) 8-5330/D251MH/5257KI/7223KI, MT No.1221–1/3



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D1395 pdf
Continued from preceding page.
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Inductive Load Handling Capability
Rise Time
Strage Time
Fall Time
Specified Test Circuit
2SD1395
Symbol
Conditions
V(BR)CBO
V(BR)CEO
Es/b
ton
tstg
tf
IC=5mA, IE=0
IC=50mA, RBE=
L=100mH, RBE=100
VCC=20V, IC=3.0A, IB1=–IB2=6mA
VCC=20V, IC=3.0A, IB1=–IB2=6mA
VCC=20V, IC=3.0A, IB1=–IB2=6mA
Es/b Test Circuit
Ratings
min typ
50 60
50 60
50
0.6
4.0
1.5
max
70
70
Unit
V
V
mJ
µs
µs
µs
No.1221–2/3



Part Number D1395
Description 2SD1395
Maker Sanyo Semiconductor Corporation - Sanyo Semiconductor Corporation
Total Page 3 Pages
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