NPN Triple Diffused Planar Silicon Darlington Transistor
· Suitable for use in switching of L load (motor
drivers, printer hammer drivers, relay drivers).
· High DC current gain.
· Large current capacity
· Wide ASO.
· On-chip Zener diode of 60±10V between collector
· Uniformity in collector-to-base breakdown voltage
due to adoption of accurate impurity diffusion
· High inductive load handling capability.
0.4 1 : Base
2 : Collector
3 : Emitter
JEDEC : TO-220AB
EIAJ : SC-46
Absolute Maximum Ratings at Ta = 25˚C
Collector Current (Pulse)
* : With Zener diode of (60±10V).
–55 to +150
Electrical Characteristics at Ta = 25˚C
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
min typ max
0.9 1.5 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21599TH (KT)/91096TS (KOTO) 8-5330/D251MH/5257KI/7223KI, MT No.1221–1/3