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Hitachi Power Semiconductor Device Electronic Components Datasheet



D1367

2SD1367



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D1367 pdf
2SD1367
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Complementary pair with 2SB1001
Outline
UPAK
1
2
3
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)



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D1367 pdf
2SD1367
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
VCBO
VCEO
VEBO
IC
i *1
C(peak)
PC * 2
Tj
20
16
6
2
3
1
150
Storage temperature
Tstg –55 to +150
Notes: 1. PW 10 ms, Duty cycle 20%.
2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown
voltage
V(BR)CBO
20
Collector to emitter breakdown V(BR)CEO
voltage
16
Emitter to base breakdown
voltage
V(BR)EBO
6
Collector cutoff current
ICBO — —
Emitter cutoff current
I EBO
DC current transfer ratio
hFE*1
100 —
Collector to emitter saturation VCE(sat)
voltage
0.15
Base to emitter saturation
voltage
VBE(sat)
0.9
Gain bandwidth product
fT
— 100
Collector output capacitance Cob — 20
Note: 1. The 2SD1367 is grouped by hFE as follows.
Mark
BA
BB
BC
hFE 100 to 200 160 to 320 250 to 500
Max
0.1
0.1
500
0.3
1.2
Unit
V
V
V
µA
µA
V
V
MHz
pF
Test conditions
IC = 10 µA, IE = 0
IC = 1 mA, RBE =
IE = 10 µA, IC = 0
VCB = 16 V, IE = 0
VEB = 5 V, IC = 0
VCE = 2 V, IC = 0.1 A, Pulse
IC = 1 A, IB = 0.1 A, Pulse
IC = 1 A, IB = 0.1 A, Pulse
VCE = 2 V, IC = 10 mA
VCB = 10 V, IE = 0, f = 1 MHz
2



Part Number D1367
Description 2SD1367
Maker Hitachi Semiconductor - Hitachi Semiconductor
Total Page 6 Pages
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