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JMnic
JMnic


D1351

2SD1351



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D1351 pdf
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
With TO-220C package
Complement to type 2SB988
Low saturation voltage
: VCE(sat)=1.0V(Max.)(IC=2.0A,IB=0.2A)
APPLICATIONS
For general purpose application
PINNING
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DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Maximum absolute ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
IB Base current
PC Collector dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
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2SD1351
VALUE
60
60
7
3
0.5
2
30
150
-50~150
UNIT
V
V
V
A
A
W
JMnic



No Preview Available !

D1351 pdf
Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SD1351
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter breakdown voltage IC=50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A
VBE Emitter-base on voltage
IC=0.5A ; VCE=5V
ICBO Collector cut-off current
VCB=60V; IE=0
IEBO Emitter cut-off current
VEB=7V; IC=0
www.DataSheeth4FUE .comDC current gain
Cob Output capacitance
IC=0.5A ; VCE=5V
IE=0; VCB=10V,f=1MHz
fT Transition frequency
IC=0.5A ; VCE=5V
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
IB1=-IB2=0.2A
VCC=30V;RL=15
Duty cycle 1%
hFE Classifications
OY
60-120
100-200
GR
150-300
MIN TYP. MAX UNIT
60 V
0.25 1.0
V
0.7 1.0
V
0.1 mA
0.1 mA
60 300
35 pF
3.0 MHz
0.65 s
1.30 s
0.65 s
JMnic



Part Number D1351
Description 2SD1351
Maker JMnic - JMnic
Total Page 3 Pages
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