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Sanyo Electric Components Datasheet


D1348

2SD1348



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D1348 pdf
Ordering number:1245C
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
2SB986/2SD1348
50V/4A Switching Applications
Applications
· Power supplies, relay drivers, lamp drivers, electrical
equipment.
Features
· Adoption of FBET and MBIT processes.
· Low saturation voltage.
· High current capacity and wide ASO.
Package Dimensions
unit:mm
2009B
[2SB986/2SD1348]
( ) : 2SB986
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)40V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)4V, IC=0
DC Current Gain
hFE1 VCE=(–)2V, IC=(–)100mA
hFE2 VCE=(–)2V, IC=(–)3A
Gain-Bandwidth Product
fT VCE=(–)10V, IC=(–)50mA
Output Capacitance
Cob VCB=(–)10V
* : The 2SB986/2SD1348 are classified by 100mA hFE as follows :
100 R 200 140 S 280 200 T 400 280 U 560
JEDEC : TO-126
1 : Emitter
2 : Collector
3 : Base
Ratings
(–)60
(–)50
(–)6
(–)4
(–)6
1.2
10
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ
100*
40
150
25(39)
max
(–)1.0
(–)1.0
560*
Unit
mA
mA
MHz
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/10996TS (KOTO) X-6510/4107KI/D12MW, TS No.1245–1/4



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D1348 pdf
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
2SB986/2SD1348
Symbol
Conditions
VCE(sat) IC=(–)2A, IB=(–)100mA, Pulse
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=(–)2A, IB=(–)100mA, Pulse
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=
IE=(–)10µA IC=0
Ratings
min typ
0.19
(–0.35)
(–)0.94
(–)60
(–)50
(–)6
max
0.5
(–0.7)
(–)1.2
Unit
V
V
V
V
V
V
No.1245–2/4



Part Number D1348
Description 2SD1348
Maker Sanyo Semicon Device - Sanyo Semicon Device
Total Page 4 Pages
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