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D13001S

Low-frequency amplification environment rated bipolar transistors



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D13001S pdf
R
D13001S
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RoHS
3DD13001S NPN
(Ta=25 )
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
:604A
600
400
9
0.5
1
150
-55~150
V
V
V
A
W
1/5



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D13001S pdf
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(Ta=25 )
D13001S
V(BR)CEO IC=10mA, IB=0
400 - V
V(BR)CBO IC=1mA, IE=0
600 - V
V(BR)EBO IE=1mA, IC=0
9 -V
ICBO VCB=580V, IE=0
- 5A
ICEO VCE=390V, IB=0
- 10 A
IEBO VEB=7V, IC=0
- 5A
hFE VCE=20V, IC=20mA 8 40
VCE(sat)(1) IC=50mA, IB=5mA
- 0.5 V
VCE(sat)(2) IC=100mA, IB=10mA - 1.0 V
VBE(sat)
IC=50mA, IB=5mA
- 1.2 V
tf
VCC=24V IC=0.1A,
IB1=-IB2=0.02A
- 0.7 S
ts
VCC=24V IC=0.1A,
IB1=-IB2=0.02A
- 4S
fT VCE=10V, IC=20mA
4 - MHz
Rth(j-a)
- 125 /W
:604A
2/5



Part Number D13001S
Description Low-frequency amplification environment rated bipolar transistors
Maker ETC - ETC
Total Page 5 Pages
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