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Panasonic Electronic Components Datasheet


D1275A

2SD1275A



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D1275A pdf
Power Transistors
2SD1275, 2SD1275A
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Silicon NPN triple diffusion planar type darlington
For power amplification
Complementary to 2SB0949 and 2SB0949A
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
Features
High forward current transfer ratio hFE
High-speed switching
Full-pack package which can be installed to the heat sink with one screw
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage
(Emitter open)
2SD1275 VCBO
2SD1275A
60
80
V
Collector-emitter voltage 2SD1275 VCEO
(Base open)
2SD1275A
60
80
V
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
TC = 25°C
Junction temperature
Storage temperature
VEBO
IC
ICP
PC
Tj
Tstg
5
2
4
35
2.0
150
55 to +150
V
A
A
W
°C
°C
Electrical Characteristics Ta = 25°C ± 3°C
φ 3.1±0.1
1.4±0.1
0.8±0.1
1.3±0.2
0.5+–00..12
2.54±0.3
5.08±0.5
1: Base
2: Collector
123
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Internal Connection
B
C
E
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage 2SD1275 VCEO IC = 30 mA, IB = 0 60 V
(Base open)
2SD1275A
80
Base-emitter voltage
Collector-base cutoff
current (Emitter open)
2SD1275
2SD1275A
VBE
ICBO
Collector-emitter cutoff
current (Base open)
2SD1275 ICEO
2SD1275A
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
IEBO
hFE1
hFE2 *
VCE(sat)
fT
ton
tstg
tf
VCE = 4 V, IC = 2 A
VCB = 60 V, IE = 0
VCB = 80 V, IE = 0
VCE = 30 V, IB = 0
VCE = 40 V, IB = 0
VEB = 5 V, IC = 0
VCE = 4 V, IC = 1 A
VCE = 4 V, IC = 2 A
IC = 2 A, IB = 8 mA
VCE = 10 V, IC = 0.5 A, f = 1 MHz
IC = 2 A, IB1 = 8 mA, IB2 = −8 mA,
VCC = 50 V
1 000
1 000
2.8 V
1 mA
1
2 mA
2
2 mA
10 000
2.5 V
20 MHz
0.5 µs
4.0 µs
1.0 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE2 1 000 to 2 500 2 000 to 5 000 4 000 to 10 000
Publication date: February 2003
SJD00189BED
1



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D1275A pdf
2SD1275, 2SD1275A
50
40
(1)
30
PC Ta
(1)TC=Ta
(2)With a 100×100×2mm
Al heat sink
(3)With a 50×50×2mm
Al heat sink
(4)Without heat sink
(PC=2W)
20
(2)
10
(3)
(4)
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
5
TC=25˚C
4
IB=2.0mA
1.8mA
1.6mA
3 1.4mA
1.2mA
1.0mA
0.8mA
2 0.6mA
0.4mA
0.2mA
1
0
0123456
Collector-emitter voltage VCE (V)
www.DaICtaShVeeBEt4U.com
10
VCE=4V
8
25˚C
TC=100˚C –25˚C
6
4
2
0
0 0.8 1.6 2.4 3.2
Base-emitter voltage VBE (V)
VCE(sat) IC
100
IC/IB=250
10
1 TC=–25˚C
100˚C
0.1
25˚C
hFE IC
105
VCE=4V
104
TC=100˚C
103 25˚C
–25˚C
102
Cob VCB
104
IE=0
f=1MHz
TC=25˚C
103
102
10
0.01
0.01
0.1 1
Collector current IC (A)
10
10
0.01
0.1 1
Collector current IC (A)
10
1
0.1 1 10 100
Collector-base voltage VCB (V)
Safe operation area
100 Non repetitive pulse
TC=25˚C
10
ICP
IC
1
t=10ms
t=1ms
DC
0.1
0.01
1
10 100 1 000
Collector-emitter voltage VCE (V)
Rth t
103 (1)Without heat sink
(2)With a 100×100×2mm Al heat sink
102 (1)
(2)
10
1
101
102
104
103
102
101
1
10 102 103 104
Time t (s)
2 SJD00189BED



Part Number D1275A
Description 2SD1275A
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 3 Pages
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