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Panasonic Electronic Components Datasheet


D1266A

2SD1266A



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D1266A pdf
Power Transistors
2SD1266, 2SD1266A
Silicon NPN triple diffusion planar type
For power amplification
Features
High forward current transfer ratio hFE which has satisfactory linearity
Low collector-emitter saturation voltage VCE(sat)
Full-pack package which can be installed to the heat sink with one screw
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
www.DataSheCeto4lUle.cctoorm-base voltage
(Emitter open)
2SD1266 VCBO
2SD1266A
60
80
Collector-emitter voltage 2SD1266 VCEO
(Base open)
2SD1266A
60
80
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
TC = 25°C
VEBO
IC
ICP
PC
6
3
5
35
2.0
Junction temperature
Storage temperature
Tj 150
Tstg 55 to +150
Unit
V
V
V
A
A
W
°C
°C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ 3.1±0.1
1.4±0.1
0.8±0.1
1.3±0.2
0.5+–00..12
2.54±0.3
5.08±0.5
1: Base
2: Collector
123
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage 2SD1266 VCEO IC = 30 mA, IB = 0 60 V
(Base open)
2SD1266A
80
Base-emitter voltage
Collector-emitter cutoff
current (E-B short)
2SD1266
2SD1266A
VBE
ICES
Collector-emitter cutoff
current (Base open)
2SD1266 ICEO
2SD1266A
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
IEBO
hFE1 *
hFE2
VCE(sat)
fT
ton
tstg
tf
VCE = 4 V, IC = 3 A
VCE = 60 V, VBE = 0
VCE = 80 V, VBE = 0
VCE = 30 V, IB = 0
VCE = 60 V, IB = 0
VEB = 6 V, IC = 0
VCE = 4 V, IC = 1 A
VCE = 4 V, IC = 3 A
IC = 3 A, IB = 0.375 A
VCE = 10 V, IC = 0.5 A, f = 10 MHz
IC = 1 A, IB1 = 0.1 A, IB2 = − 0.1 mA
VCC = 50 V
1.8 V
200 µA
200
300 µA
300
1 mA
70 320
10
1.2 V
30 MHz
0.5 µs
2.5 µs
0.4 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
O
hFE1
70 to 150
120 to 250 160 to 320
Publication date: April 2003
SJD00283BED
1



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D1266A pdf
2SD1266, 2SD1266A
50
40
(1)
30
PC Ta
(1) TC = Ta
(2) With a 100 × 100 × 2 mm
Al heat sink
(3) With a 50 × 50 × 2 mm
Al heat sink
(4) Without heat sink
(PC = 2 W)
20
(2)
10
(3)
(4)
0
0 40 80 120 160
www.DataSheet4U.coAmmbient temperature Ta (°C)
IC VCE
5
TC = 25°C
4
IB = 100 mA
90 mA
80mA
3
70 mA
60 mA
50 mA
40 mA
2 30 mA
20 mA
1
10 mA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
IC VBE
8
VCE = 4 V
25°C
6 TC = 100°C 25°C
4
2
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Base-emitter voltage VBE (V)
VCE(sat) IC
100
IC/IB = 8
10
hFE IC
fT IC
104 104
VCE = 4 V
VCE = 5 V
f = 10 MHz
TC = 25˚C
103 103
TC = 100˚C
TC = 100˚C 25°C
25˚C
1 102 25°C
–25°C
102
0.1 10 10
0.01
0.01
0.1 1
Collector current IC (A)
10
1
0.01 0.1
1
Collector current IC (A)
10
1
0.01 0.1
1
Collector current IC (A)
10
Safe operation area
100
Non repetitive pulse
TC = 25˚C
10
ICP
IC
1
t = 1ms
10 ms
DC
0.1
0.01
1
10 100 1000
Collector-emitter voltage VCE (V)
Rth t
103
(1) Without heat sink
(2) With a 100 × 100 × 2 mm Al heat sink
102 (1)
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10 102 103 104
Time t (s)
2 SJD00283BED



Part Number D1266A
Description 2SD1266A
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 3 Pages
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