http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf



  NEC Electronic Components Datasheet  


D1264

2SD1264



No Preview Available !

D1264 pdf
DATA SHEET
SILICON POWER TRANSISTOR
2SD2164
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD2164 is a single power transistor developed especially
for high hFE. This transistor is ideal for simplifying drive circuits and
reducing power dissipation because its hFE is as high as that of
Darlington transistors, but it is a single transistor.
In addition, this transistor features a small resin insulated
package, thus contributing to high-density mounting and mounting
cost reduction.
FEATURES
• High hFE and low VCE(sat):
hFE 1,300 TYP. (VCE = 5.0 V, IC = 0.5 A)
VCE(SAT) 0.3 V TYP. (IC = 2.0 A, IB = 20 mA)
• Full mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (pulse)
IC(pulse)
Base current (DC)
IB(DC)
Total power dissipation
PT (TC = 25°C)
Total power dissipation
PT (TA = 25°C)
Junction temperature
Tj
Storage temperature
Tstg
Note PW 300 µs, duty cycle 10%
Ratings
60
60
7.0
3.0
5.0Note
0.5
20
2.0
150
55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
(OHFWURGH &RQQHFWLRQ
 %DVH
 &ROOHFWRU
 (PLWWHU
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15606EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928



No Preview Available !

D1264 pdf
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO VCB = 60 V, IE = 0 A
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
VEB = 7.0 V, IC = 0 A
VCE = 5.0 V, IC = 0.5 ANote
VCE = 5.0 V, IC = 3.0 ANote
IC = 2.0 A, IB = 20 mANote
IC = 2.0 A, IB = 20 mANote
Gain bandwidth product
fT VCE = 5.0 V, IC = 0.1 A
Collector capacitance
Cob VCB = 10 V, IE = 0 A, f = 1.0 MHz
1RWH Pulse test PW 350 µs, duty cycle 2%
hFE1 CLASSIFICATION
Marking
hFE1
M
800 to 1,600
L
1,000 to 2,000
K
1,600 to 3,200
2SD2164
MIN.
800
500
TYP.
1,300
1,000
0.3
110
50
MAX.
10
10
3,200
0.5
1.2
Unit
µA
µA
V
V
MHz
pF
2 Data Sheet D15606EJ3V0DS



Part Number D1264
Description 2SD1264
Maker NEC - NEC
Total Page 6 Pages
PDF Download
D1264 pdf
Download PDF File
D1264 pdf
View for Mobile




Featured Datasheets

Part Number Description Manufacturers PDF
D12000W Standard Recovery Diode D12000W
nELL
PDF
D1201 METAL GATE RF SILICON FET D1201
Seme LAB
PDF
D1201UK METAL GATE RF SILICON FET D1201UK
Seme LAB
PDF
D1202 METAL GATE RF SILICON FET D1202
Seme LAB
PDF
D1202UK METAL GATE RF SILICON FET D1202UK
Seme LAB
PDF
D1203UK METAL GATE RF SILICON FET D1203UK
Seme LAB
PDF


Part Number Start With

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z

site map

webmaste! click here

contact us

Buy Components