http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf



Panasonic Electronic Components Datasheet


D1263A

2SD1263A



No Preview Available !

D1263A pdf
Power Transistors
2SD1263, 2SD1263A
Silicon NPN triple diffusion planar type
For power amplification
s Features
q High collector to base voltage VCBO
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SD1263
base voltage 2SD1263A
VCBO
350
400
Collector to 2SD1263
emitter voltage 2SD1263A
VCEO
250
300
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
5
1.5
0.75
35
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD1263
www.DcautrareSnht eet4U.com 2SD1263A
Collector cutoff
2SD1263
current
2SD1263A
ICES
ICEO
Emitter cutoff current
Collector to emitter 2SD1263
voltage
2SD1263A
IEBO
VCEO
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
hFE1*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
VCE = 350V, VBE = 0
VCE = 400V, VBE = 0
VCE = 150V, IB = 0
VCE = 200V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 10V, IC = 0.3A
VCE = 10V, IC = 1A
VCE = 10V, IC = 1A
IC = 1A, IB = 0.2A
VCE = 5V, IC = 0.5A, f = 10MHz
IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V
*hFE1 Rank classification
Rank
Q
P
hFE1 70 to 150 120 to 250
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min typ max Unit
1
mA
1
1
mA
1
1 mA
250
V
300
70 250
10
1.5 V
1V
30 MHz
0.5 µs
2 µs
0.5 µs
1



No Preview Available !

D1263A pdf
Power Transistors
50
40
(1)
30
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
20
(2)
10
(3)
(4)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
1.2
TC=25˚C
1.0
0.8
IB=14mA
12mA
10mA
0.6 8mA
6mA
0.4 4mA
0.2 2mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD1263, 2SD1263A
IC — VBE
4.0
VCE=10V
3.2 25˚C
TC=100˚C –25˚C
2.4
1.6
0.8
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Base to emitter voltage VBE (V)
VCE(sat) — IC
IC/IB=10
10
TC=100˚C
3
1
0.3
25˚C
–25˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3
1
Collector current IC (A)
3
www.DataSheet4U.com
Area of safe operation (ASO)
10
3
ICP
1
IC
0.3
0.1
Non repetitive pulse
TC=25˚C
10ms
t=1ms
DC
0.03
0.01
0.003
0.001
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
10000
3000
1000
hFE — IC
VCE=10V
300
TC=100˚C
100 25˚C
–25˚C
30
10
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
1000
300
100
fT — IC
VCE=10V
f=10MHz
TC=25˚C
30
10
3
1
0.3
0.1
0.001 0.003 0.01 0.03 0.1 0.3
Collector current IC (A)
1
Rth(t) — t
103 (1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
102 (1)
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10 102 103 104
Time t (s)
2



Part Number D1263A
Description 2SD1263A
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 2 Pages
PDF Download
D1263A pdf
Download PDF File
D1263A pdf
View for Mobile



Featured Datasheets

Part Number Description Manufacturers PDF
D1260 METAL GATE RF SILICON FET D1260
Seme LAB
PDF
D1260UK METAL GATE RF SILICON FET D1260UK
Seme LAB
PDF
D1262 2SD1262 D1262
Panasonic
PDF
D1262A 2SD1262A D1262A
Panasonic
PDF
D1263A 2SD1263A D1263A
Panasonic Semiconductor
PDF
D1264 2SD1264 D1264
Panasonic Semiconductor
PDF


Part Number Start With

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z

site map

webmaste! click here

contact us

Buy Components