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Sanyo Electric Components Datasheet


D1246

2SD1246



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D1246 pdf
Ordering number:1030E
PNP/NPN Epitaxial Planar Silicon Transistors
2SB926/2SD1246
Large-Current Driving Applications
Applications
· Power supplies, relay drivers, lamp drivers, electrical
equipment.
Features
· Adoption of FBET, MBIT processes.
· Low saturation voltage.
· Large current capacity and wide ASO.
Package Dimensions
unit:mm
2003A
[2SB926/2SD1246]
( ) : 2SB926
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)20V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)4V, IC=0
DC Current Gain
hFE1 VCE=(–)2V, IC=(–)100mA
hFE2 VCE=(–)2V, IC=(–)1.5A, pulse
Gain-Bandwidth Product
fT VCE=(–)10V, IC=(–)50mA
Common Base Output Capacitance
Cob VCB=(–)10V, f=1MHz
* : The 2SB926/2SD1246 are classified by 100mA hFE as follows :
100 R 200 140 S 280 200 T 400 280 U 560
JEDEC : TO-92
EIAJ : SC-43
SANYO : NP
B : Base
C : Collector
E : Emitter
Ratings
(–)30
(–)25
(–)6
(–)2
(–)5
0.75
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Ratings
min typ
100*
65
130
150
19(32)
max
(–)0.1
(–)0.1
560*
Unit
µA
µA
MHz
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/4077KI/2275MW/D282KI, TS No.1030–1/3



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D1246 pdf
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
2SB926/2SD1246
Symbol
Conditions
VCE(sat) IC=(–)1.5A, IB=(–)75mA, pulse
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=(–)1.5A, IB=(–)75mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=
IE=(–)10µA IC=0
Ratings
min typ
0.18
(–0.35)
(–)0.85
(–)30
(–)25
(–)6
max
0.4
(–0.6)
(–)1.2
Unit
V
V
V
V
V
V
No.1030–2/3



Part Number D1246
Description 2SD1246
Maker Sanyo Semicon Device - Sanyo Semicon Device
Total Page 3 Pages
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