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Sanyo Electric Components Datasheet


D1235

2SD1235



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D1235 pdf
Ordering number:1046B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB919/2SD1235
30V/8A High-Speed Switching Applications
Applications
· Large current switching of relay drivers, high-speed
inverters, converters.
Features
· Low collector-to-emitter saturation voltage :
VCE(sat)=–0.5V (PNP), 0.4V (NPN) max.
· Large current capacity.
Package Dimensions
unit:mm
2010C
[2SB919/2SD1235]
( ) : 2SB919
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
ICBO
IEBO
hFE1
hFE2
fT
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)1A
VCE=(–)2V, IC=(–)4A
VCE=(–)5V, IC=(–)1A
* : The 2SB919/2SD1235 are classified as follows according to hFE at 1A.
70 Q 140 100 R 200 140 S 280
JEDEC : TO-220AB
EIAJ : SC-46
1 : Base
2 : Collector
3 : Emitter
Ratings
(–)60
(–)30
(–)6
(–)8
(–)15
1.75
30
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ
70*
30
120
max
(–)0.1
(–)0.1
280*
Unit
mA
mA
MHz
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/D251MH/4067KI/D152KI, TS No.1046–1/4



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D1235 pdf
Parameter
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Switching Time Test Circuit
2SB919/2SD1235
Symbol
Conditions
VCE(sat) IC=(–)3A, IB=(–)0.15A
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
IC=(–)1mA, IE=0
IC=(–)1mA, RBE=
IE=(–)1mA IC=0
See specified Test Circuit
See specified Test Circuit
tf See specified Test Circuit
Ratings
min typ
(–)60
(–)30
(–)6
0.1
(0.2)
0.5
0.03
max
0.4
(–0.5)
Unit
V
V
V
V
V
µs
µs
µs
µs
No.1046–2/4



Part Number D1235
Description 2SD1235
Maker Sanyo - Sanyo
Total Page 4 Pages
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