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Toshiba Electronic Components Datasheet



D1223

2SD1223



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D1223 pdf
2SD1223
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington)
2SD1223
Switching Applications
Hammer Drive, Pulse Motor Drive Applications
Power Amplifier Applications
Unit: mm
High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)
Complementary to 2SB908.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
VCBO
VCEO
VEBO
IC
IB
PC
100 V
80 V
5V
4A
0.4 A
1.0
W
15
JEDEC
JEITA
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
55 to 150
°C
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Equivalent Circuit
BASE
COLLECTOR
4.5 k
300
EMITTER
1 2010-02-05
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D1223 pdf
Electrical Characteristics (Ta = 25°C)
2SD1223
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
VCB = 100 V, IE = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 1 A
VCE = 2 V, IC = 3 A
IC = 3 A, IB = 6 mA
IC = 3 A, IB = 6 mA
Min Typ. Max Unit
80
2000
1000
20 μA
2.5 mA
V
1.5 V
2.0 V
Turn-on time
Switching time Storage time
Fall time
ton
20 μs
IB1
OUTPUT 0.2
tstg
INPUT
IB2
IB2
1.5
μs
VCC = 30 V
tf 0.6
IB1 = IB2 = 6 mA, DUTY CYCLE 1%
Marking
D1223
Part No. (or abbreviation code)
Lot No.
Note 1
Note 1:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the
RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in
electrical and electronic equipment.
2 2010-02-05
Free Datasheet http://www.Datasheet4U.com



Part Number D1223
Description 2SD1223
Maker Toshiba Semiconductor - Toshiba Semiconductor
Total Page 5 Pages
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