http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf



Sanyo Electric Components Datasheet


D1213

2SD1213



No Preview Available !

D1213 pdf
Ordering number:1022A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB904/2SD1213
30V/12A High-Speed Switching Applications
Applications
· Large current switching of relay drivers, high-speed
inverters, converters.
Features
· Low collector-to-emitter saturation voltage :
VCE(sat)=–0.5V (PNP), 0.4V (NPN) max.
· Large current capacity.
Package Dimensions
unit:mm
2022A
[2SB904/2SD1213]
( ) : 2SB904
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-to-Emitter Saturation Voltage
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)1A
VCE=(–)2V, IC=(–)10A
IC=(–)8A, IB=(–)0.4A
* : The 2SB904/2SD1213 are classified as follows according to hFE at 1A.
70 Q 140 100 R 200 140 S 280
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Ratings
(–)60
(–)30
(–)6
(–)20
(–)30
2.5
60
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ
70*
30
(–0.25)
0.2
max
(–)0.1
(–)0.1
280*
(–0.5)
0.4
Unit
mA
mA
V
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/4067KI/D152KI, TS No.1022–1/4



No Preview Available !

D1213 pdf
Parameter
Gain-Bandwidth Product
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Switching Time Test Circuit
2SB904/2SD1213
Symbol
Conditions
fT
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
VCE=(–)5V, IC=(–)1A
IC=(–)1mA, IE=0
IC=(–)1mA, RBE=
IE=(–)1mA, IC=0
See specified Test Circuit
See specified Test Circuit
tf See specified Test Circuit
Ratings
min typ
120
(–)60
(–)30
(–)6
300
(300)
600
20
max
Unit
MHz
V
V
V
ns
ns
ns
ns
No.1022–2/4



Part Number D1213
Description 2SD1213
Maker Sanyo - Sanyo
Total Page 4 Pages
PDF Download
D1213 pdf
Download PDF File
D1213 pdf
View for Mobile




Featured Datasheets

Part Number Description Manufacturers PDF
D12000W Standard Recovery Diode D12000W
nELL
PDF
D1201 METAL GATE RF SILICON FET D1201
Seme LAB
PDF
D1201UK METAL GATE RF SILICON FET D1201UK
Seme LAB
PDF
D1202 METAL GATE RF SILICON FET D1202
Seme LAB
PDF
D1202UK METAL GATE RF SILICON FET D1202UK
Seme LAB
PDF
D1203UK METAL GATE RF SILICON FET D1203UK
Seme LAB
PDF


Part Number Start With

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z

site map

webmaste! click here

contact us

Buy Components