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Seme LAB
Seme LAB


D1212UK

METAL GATE RF SILICON FET



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D1212UK pdf
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TetraFET
D1212UK
MECHANICAL DATA
C
AD
B
(4 pls)
2
1
3
54
I
F
G
(t yp )
E
PIN 1
PIN 3
PIN 5
NM
H
DH
SOURCE (COMMON)
DRAIN 2
GATE 1
JK
PIN 2
PIN 4
DRAIN 1
GATE 2
DIM mm
A 13.97
B 5.72
C 45°
D 9.78
E 1.65R
F 23.75
G 1.52R
H 30.48
I 19.17
J 0.13
K 2.54
M 1.52
N 5.08
Tol. Inches Tol.
0.26 0.550 0.010
0.13 0.225 0.005
5° 45° 5°
0.13 0.385 0.005
0.13 0.065R 0.005
0.13 0.935 0.005
0.13 0.060R 0.005
0.13 1.200 0.005
0.26 0.755 0.010
0.02 0.005 0.001
0.13 0.100 0.005
0.13 0.060 0.005
0.50 0.200 0.020
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
100W – 12.5V – 500MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
290W
BVDSS
Drain – Source Breakdown Voltage *
40V
BVGSS
Gate – Source Breakdown Voltage *
±20V
ID(sat)
Drain Current
30A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
* Per Side
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/96



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D1212UK pdf
D1212UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source
BVDSS Breakdown Voltage
PER SIDE
VGS = 0
ID = 100mA
40
IDSS
Zero Gate Voltage
Drain Current
VDS = 12.5V
VGS = 0
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs Forward Transconductance*
GPS
η
Common Source Power Gain
Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V
VDS = 0
ID = 10mA
VDS = VGS
VDS = 10V
ID = 3A
TOTAL DEVICE
PO = 100W
VDS = 12.5V
IDQ = 4A
f = 500MHz
1
2.4
10
50
20:1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
PER SIDE
VDS = 0V VGS = –5V f = 1MHz
VDS = 12.5V VGS = 0 f = 1MHz
VDS = 12.5V VGS = 0 f = 1MHz
Typ.
Max. Unit
V
3 mA
1 µA
5.5 V
mhos
dB
%
180 pF
120 pF
12 pF
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Max. 0.6°C / W
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/96



Part Number D1212UK
Description METAL GATE RF SILICON FET
Maker Seme LAB - Seme LAB
Total Page 2 Pages
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