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Sanyo Electric Components Datasheet


D1212

2SD1212



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D1212 pdf
Ordering number:990C
PNP/NPN Epitaxial Planar Silicon Transistors
2SB903/2SD1212
30V/12A High-Speed Switching Applications
Applications
· Suitable for relay drivers, high-speed inverters,
converters, and other general large-current switching
applications.
Features
· Low collector-to-emitter saturation voltage :
VCE(sat)=(–)0.5V (PNP), 0.4V (NPN) max.
· Large current capacity.
Package Dimensions
unit:mm
2010C
[2SB903/2SD1212]
( ) : 2SB903
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
ICBO
IEBO
hFE1
hFE2
fT
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)1A
VCE=(–)2V, IC=(–)6A
VCE=(–)5V, IC=(–)1A
* : The 2SB903/2SD1212 are graded as follows by hFE at 1A :
70 Q 140 100 R 200 140 S 280
JEDEC : TO-220AB
EIAJ : SC-46
1 : Base
2 : Collector
3 : Emitter
Ratings
(–)60
(–)30
(–)6
(–)12
(–)20
1.75
35
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ
70*
30
120
max
(–)0.1
(–)0.1
280*
Unit
mA
mA
MHz
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/D251MH/4067KI/3075KI No.990–1/4



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D1212 pdf
Parameter
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Switching Time Test Circuit
2SB903/2SD1212
Symbol
Conditions
VCE(sat) IC=(–)5A, IB=(–)0.25A
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
IC=(–)1mA, IE=0
IC=(–)1mA, RBE=
IE=(–)1mA, IC=0
See specified Test Circuit
tstg See specified Test Circuit
tf See specified Test Circuit
Ratings
min typ
(–)60
(–)30
(–)6
(0.1)
0.2
(0.3)
0.5
0.03
max
(–0.5)
0.4
Unit
V
V
V
V
V
µs
µs
µs
µs
µs
Unit (resistance : , capacitance : F)
No.990–2/4



Part Number D1212
Description 2SD1212
Maker Sanyo - Sanyo
Total Page 4 Pages
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