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Toshiba Electronic Components Datasheet



D1140

2SD1140



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D1140 pdf
2SD1140
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor)
2SD1140
Micro Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
Unit: mm
· High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)
· Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
30
30
10
1.5
50
900
150
55 to 150
Unit
V
V
V
A
mA
mW
°C
°C
Equivalent Circuit
BASE
COLLECTOR
JEDEC
TO-92MOD
JEITA
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
EMITTER
1 2003-02-04



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D1140 pdf
2SD1140
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE
VCE (sat)
VBE (sat)
VCB = 30 V, IE = 0
VEB = 10 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 150 mA
IC = 1 A, IB = 1 mA
IC = 1 A, IB = 1 mA
Min Typ. Max Unit
― ― 10 µA
― ― 10 µA
30 ― ―
V
4000
1.5 V
2.2 V
Turn-on time
ton
20 µs
Input
Output 0.2
Switching time Storage time
Fall time
Marking
tstg
VCC = 15 V
tf
IB1 = IB2 = 1 mA, duty cycle 1%
0.6 µs
0.3
D1140
Product No.
Lot No.
Explanation of Lot No.
Month of manufacture (January to December are denoted by letters A to L respectively.)
Year of manufacture (Last decimal digit of the year of manufacture)
2 2003-02-04



Part Number D1140
Description 2SD1140
Maker Toshiba Semiconductor - Toshiba Semiconductor
Total Page 5 Pages
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